MIE-324A2

AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE Description The MIE-324A2 is a high power infrared eimtting diode in GaAs technology with AlGaAs window coating molded in water clear plastic package. φ 3.55±0.25 (.140±.010) φ 3.10±0.20 (.122±.008) MIE-324A2 Unit : mm (inches ) Package Dimensions 4.28±0.20 (.169±.008) 5.28±0.30 (.208±.012) SEE NOTE 2 3.85 (.152) Features l l l l 23.40MIN. (.920) CATHODE l High radiant power and high radiant intensity Suitable ror DC and high pulse current operation Standard T-1 ( φ 3mm) package, radiation angle: 40° Peak wavelength λp = 940 nm Good spectral matching to si-photodetector A 0.50 TYP. (.020) 1.00MIN. (.039) 2.54NOM. (.100) SEE NOTE 3 C Notes : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.5 mm (.059") max. 3. Lead spacing is measured where the leads emerge from the package. Absolute Maximum Ratings @ TA=25 C Parameter Power Dissipation Peak Forward Current(300pps,10µs pulse) Continuos Forward Current Reverse Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature Maximum Rating 120 1 100 5 -55 C to +100 C -55 C to +100 C 260oC for 5 seconds o o o o o Unit mW A mA V Unity Opto Technology Co., Ltd. 02/04/2002 MIE-324A2 Optical-Electrical Characteristics @ TA=25oC Parameter Radiant Intensity Forward Voltage Reverse Current Peak Wavelength Spectral Bandwidth View Angle Test Conditions IF=20mA IF=50mA VR=5V IF=20mA IF=20mA IF=20m...