GaAlAs 1.8mm PACKAGE INFRARED EMITTING DIODE
GaAlAs 1.8mm PACKAGE INFRARED EMITTING DIODE
Description
The MIE-184H4K is a GaAlAs infrared LED having a peak wavelengt...
Description
GaAlAs 1.8mm PACKAGE INFRARED EMITTING DIODE
Description
The MIE-184H4K is a GaAlAs infrared LED having a peak wavelength at 850nm. It features ultra-high power, high response speed and molded package with higher radiant intensity. In addition to improving the S/N ratio in applied optical systems, the MIE-184H4K has greatly improved long-distance characteristics as well as significantly increased its range of applicability .
3.00 (.118) 3.30 (.130) 1.40 (.055) 1.60 (.063) R 1.70 (.067) φ1.80 (.071) 2.40 (.094)
MIE-184H4
Package Dimensions
Unit : mm (inches )
SEE NOTE 2
Features
l l l l
Ultra-High radiant intensity High response speed Special 1.8mm package, radiant angle : 35o Peak wavelength λP =850 nm
2.54 NOM. (.100) A 0.50 TYP. (.020)
25.40MIN. (1.000)
1.00MIN. (.040)
SEE NOTE 3
Application
l l
C
Data communication SIR
Notes : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 0.4 mm (.015") max. 3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
@ TA=25 C Parameter Power Dissipation Peak Forward Current(300pps,10µs pulse) Continuous Forward Current Reverse Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature Maximum Rating 100 1 100 5 -55 C to +100 C -55oC to +100oC 260oC for 5 seconds
o o o
Unit mW A mA V
Unity Opto Technology Co., Ltd.
02/04/2002
MIE-184H4K
Optical-Electrical Characteristics
@ TA=25oC Parameter Radiant Intensity Forwar...
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