MIE-184A4

GaAlAs/GaAs 1.8mm PACKAGE INFRARED EMITTING DIODE Description The MIE-184A4 is a high power infrared eimtting diode in GaAs technology with AlGaAs window coating molded in water clear plastic package. R 1.70 (.067) φ1.80 (.071) 2.40 (.094) MIE-184A4 Package Dimensions Unit : mm (inches ) 3.30 (.130) 1.40 (.055) 1.60 (.063) Features l l l l l 3.00 (.118) High radiant power and high radiant intensity Suitable for DC and high pulse current operation Special 1.8mm package, radiation angle: 35° Peak wavelength λp = 940 nm Good spectral matching to Si-Photodetector 0.50 TYP. (.020) SEE NOTE 2 25.40MIN. (1.000) 1.00MIN . Application A l l 2.54 NOM. (.100) SEE NOTE 3 C Data communication SIR Notes : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 0.4 mm (.015") max. 3. Lead spacing is measured where the leads emerge from the package. Absolute Maximum Ratings @ TA=25 C Parameter Power Dissipation Peak Forward Current(300pps,10µs pulse) Continuous Forward Current Reverse Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature Maximum Rating 100 1 100 5 -55 C to +100 C -55oC to +100oC 260 C for 5 seconds o o o o Unit mW A mA V Unity Opto Technology Co., Ltd. 02/04/2002 MIE-184A4 Optical-Electrical Characteristics @ TA=25oC Parameter Radiant Intensity Forward Voltage Reverse Current Peak Wavelength Spectral Bandwidth View Angle Test Conditions IF=20mA IF=50mA VR=5V IF=20mA IF=20mA IF=20mA Symbo...