MIE-114A1

GaAlAs/GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE Description The MIE-114A1 is a GaAs infrared emitting diode molded in clear, lensed side looking package . The MIE-114A1 provides a broad range of intensity selection . 5.72±0.2 (.225±.008) 4.45±0.20 (.175±.008) 2.22 (.087) (.087) 1.22±0.10 (.048±.004) MIE-114A1 Package Dimensions Unit: mm ( inches ) 0.76±0.10 (.030±.008) 1.55±0.02 (.061±.008) 12.7 MIN. (.500) Features l CATHODE Selected to specific on-line intensity and 1.0 MIN. (.040) 2.54 NOM. (.100) SEE NOTE 3 0.5 TYP. (.020) radiant intensity ranges l Low cost, plastic side looking package l Mechanically and spectrally matched to the MID-11422 of phototransistor . C A NOTES : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.5 mm (.059") max. 3. Lead spacing is measured where the leads emerge from the package. Absolute Maximum Ratings @ TA=25 C Parameter Power Dissipation Peak Forward Current(300pps,10µs pulse) Continuos Forward Current Reverse Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature Maximum Rating 75 1 50 5 -55 C to +100 C -55oC to +100oC 260 C for 5 seconds o o o o Unit mW A mA V Unity Opto Technology Co., Ltd. 02/04/2002 MIE-114A1 Optical-Electrical Characteristics @ TA=25oC Parameter Radiant Incidance Forward Voltage Reverse Current Peak Wavelength Spectral Bandwidth View Angle Test Conditions IF=20mA IF=20mA VR=5V IF=20mA IF=20mA IF=20mA Symbo...