MIE-111A1

AlGaAs/GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE Description The MIE-111A1 is a AlGaAs/GaAs infrared emitting diode molded in diffused, lensed side looking package . The MIE-111A1 provides a broad range of intensity selection . 5.72±0.2 (.225±.007) 4.45±0.2 (.175±.007) 2.22 (.087) (.087) MIE-111A1 Package Dimensions Unit: mm ( inches ) 0.76±0.1 (.030±.004) 1.55±.02 (.061±.007) 4.5±0.1 (.177±.004) 12.7 MIN. (.500) CATHODE Features l 0.5 TYP. (.020) 1.0 MIN. (.039) 2.54 NOM. (.100) SEE NOTE 3 Selected to specific on-line intensity and radiant intensity l Low cost, plastic side looking package C A NOTES : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Lead spacing is measured where the leads emerge from the package. Absolute Maximum Ratings @ TA=25 C Parameter Power Dissipation Peak Forward Current Continuos Forward Current Reverse Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature Maximum Rating 75 1 50 5 -55 C to + 100 C -55oC to + 100oC 260oC for 5 seconds o o o Unit mW A mA V Unity Opto Technology Co., Ltd. 02/04/2002 MIE-111A1 Optical-Electrical Characteristics @ TA=25oC Parameter Radiant Incidance Forward Voltage Reverse Current Peak Wavelength Spectral Bandwidth View Angle Test Conditions IF=20mA IF=20mA VR=5V IF=20mA IF=20mA IF=20mA Symbol Ee VF IR λp ∆λ 2θ1/2 Min. Typ . 0.6 1.2 940 50 100 Max. 1.35 100 Unit mW/cm2 V µA nm nm deg . Typical Optical-Electrical Characteristic Curves Relati...