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MID-57422 Dataheets PDF



Part Number MID-57422
Manufacturers Unity Opto Technology
Logo Unity Opto Technology
Description T-1 3/4 PACKAGE NPN PHOTOTRANSISTOR
Datasheet MID-57422 DatasheetMID-57422 Datasheet (PDF)

T-1 3/4 PACKAGE NPN PHOTOTRANSISTOR Description The MID-57422 is a NPN silicon phototransistor mounted in a lensed , water clear plastic package to fit wide range of IR light source. MID-57422 Package Dimensions £r 5.05 (.200) Unit : mm (inches ) 5.47 (.215) 7.62 (.300) 5.90 (.230) Features l l l l l 1.00 (.040) Wide range of collector current Lensed for high sensitivity Standard T-1 3/4 (5mm) package Acceptance view angle : 70° Low cost plastic package 1.00MIN. (.040) 2.54 (.100) 0.50TYP..

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T-1 3/4 PACKAGE NPN PHOTOTRANSISTOR Description The MID-57422 is a NPN silicon phototransistor mounted in a lensed , water clear plastic package to fit wide range of IR light source. MID-57422 Package Dimensions £r 5.05 (.200) Unit : mm (inches ) 5.47 (.215) 7.62 (.300) 5.90 (.230) Features l l l l l 1.00 (.040) Wide range of collector current Lensed for high sensitivity Standard T-1 3/4 (5mm) package Acceptance view angle : 70° Low cost plastic package 1.00MIN. (.040) 2.54 (.100) 0.50TYP. (.020) 23.40MIN. (.920) FLAT DENOTES COLLECTOR E C Notes : 1.Tolerance is ± 0.25 mm(.010")unless otherwise noted. 2.Protruded resin under flange is 1.0 mm(.040")max. 3.Lead spacing is measured where the leads emerge from the package. Absolute Maximum Ratings @ TA=25¢J Parameter Power Dissipation Collector-Emitter Voltage Emitter-Collector Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature Maximum Rating 150 30 5 -55¢J to +100¢J -55¢J to +100¢J 260¢J for 5 seconds Unit mW V V 07/21/2000 Unity Opto Technology Co., Ltd. MID-57422 Optical-Electrical Characteristics Parameter Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Saturation Voltage Rise Time Fall Time Collector Dark Current On State Collector Current Test Conditions Ic=0.1mA Ee=0 Ie=0.1mA Ee=0 Ic=0.5mA Ee=0.1mW/cm Vcc =5V , RL=1KΩ IC=1mA VCE=10V Ee=0 VCE=5V Ee=0.1mW/cm2 IC Normalized Collector Current 2 @ TA=25¢J Symbol V(BR)CEO V(BR)ECO VCE(SAT) Tr Tf ICEO IC(ON) 0.4 15 15 100 Min. 30 5 0.4 Typ . Max. Unit V V V µS nA mA Typical Optical-Electrical Characteristic Curves Iceo-Collector Dark Current -µA 1000 100 10 1 0.1 0.01 0.001 0 40 80 120 4 3.5 3 2.5 2 1.5 1 0.5 0 Vce = 5 V Ee = 0.1 mW/cm2 @λ= 940 nm -75 -25 25 75 125 Ta - Ambient Temperature -¢J FIG.1 COLLECTOR DARK CURRENT VS AMBIENT TEMPERATURE Tr Tf Rise and Fall Time - µS 200 160 120 80 40 0 0 2 4 6 8 10 Vcc = 5 V VRL= 1 V F = 100 Hz PW = 1 ms Ta - Ambient Temperature -¢J FIG.2 NORMALIZED COLLECTOR CURRENT VS AMBIENT TEMPERATURE Relative Collector Current (mA) 5 Vce = 4 3 2 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 5V RL - Load Resistance - KΩ FIG.3 RISE AND FALL TIME VS LOAD RESISTANCE Relative Sensitivity 0° 10° Ee - Irradiance - mW/cm2 FIG.4 RELATIVE COLLECTOR CURRENT VS IRRADIANCE 20° 30° 40° 1.0 0.9 0.8 0.5 0.3 0.1 0.2 0.4 0.6 50° 60° 70° 80° 90° FIG .5 SENSITIVITY DIAGRAM Unity Opto Technology Co., Ltd. 07/21/2000 .


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