AM29SL800B

ADVANCE INFORMATION Am29SL800B 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory DISTINCTIVE CHARACTERISTICS s Single power supply operation — 1.8 to 2.2 V for read, program, and erase operations — Ideal for battery-powered applications s Manufactured on 0.35 µm process technology s High performance — Access times as fast as 170 ns s Ultra low power consumption (typical values at 5 MHz) — 65 nA Automatic Sleep Mode current — 65 nA standby mode current — 5 mA read current — 10 mA program/erase current s Flexible sector architecture — One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and fifteen 64 Kbyte sectors (byte mode) — One 8 Kword, two 4 Kword, one 16 Kword, and fifteen 32 Kword sectors (word mode) — Supports full chip erase — Sector Protection features: A hardware method of locking a sector to prevent any program or erase operations within that sector Sectors can be locked in-system or via programming equipment Temporary Sector Unprotect feature allows code changes in previously locked sectors s Unlock Bypass Program Command — Reduces overall programming time when issuing multiple program command sequences s Top or bottom boot block configurations available s Embedded Algorithms — Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors — Embedded Program algorithm automatically writes and verifies data at specified addresses s Minimum 1,000,000 write cycle guarantee per sector ...