Document
BAV756S; BAW56 series
High-speed switching diodes
Rev. 6 — 18 March 2015
Product data sheet
1. Product profile
1.1 General description
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages.
Table 1. Product overview
Type number Package
NXP
JEITA
BAV756S
SOT363 SC-88
BAW56 BAW56M
SOT23 SOT883
SC-101
BAW56S
SOT363 SC-88
BAW56T BAW56W
SOT416 SOT323
SC-75 SC-70
JEDEC -
Package configuration
very small
TO-236AB small
- leadless ultra small
- very small
- ultra small - very small
Configuration
quadruple common anode/common cathode dual common anode dual common anode
quadruple common anode/common anode dual common anode dual common anode
1.2 Features and benefits
High switching speed: trr 4 ns Low leakage current Small SMD plastic packages
Low capacitance: Cd 2 pF Reverse voltage: VR 90 V AEC-Q101 qualified
1.3 Applications
High-speed switching General-purpose switching
1.4 Quick reference data
Table 2. Quick reference data Symbol Parameter Per diode IR reverse current VR reverse voltage trr reverse recovery time
Conditions
Min Typ
VR = 80 V
[1] -
-
[1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA.
Max
0.5 90 4
Unit
A V ns
NXP Semiconductors
BAV756S; BAW56 series
High-speed switching diodes
2. Pinning information
Table 3. Pinning Pin Description BAV756S 1 anode (diode 1) 2 cathode (diode 2) 3 common anode (diode 2 and
diode 3) 4 cathode (diode 3) 5 anode (diode 4) 6 common cathode (diode 1
and diode 4) BAW56; BAW56T; BAW56W 1 cathode (diode 1) 2 cathode (diode 2) 3 common anode
BAW56M 1 2 3
cathode (diode 1) cathode (diode 2) common anode
BAW56S 1 2 3
4 5 6
cathode (diode 1)
cathode (diode 2)
common anode (diode 3 and diode 4)
cathode (diode 3)
cathode (diode 4)
common anode (diode 1 and diode 2)
Simplified outline Symbol
654
654
123
123 006aab103
33
12
006aaa144
12
006aab099
1 3
2
Transparent top view
3
12
006aab099
654
654
123
123
006aab102
BAV756S_BAW56_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 18 March 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
2 of 16
NXP Semiconductors
BAV756S; BAW56 series
High-speed switching diodes
3. Ordering information
Table 4. Ordering information
Type number Package
Name
Description
BAV756S
SC-88
plastic surface-mounted package; 6 leads
BAW56
-
plastic surface-mounted package; 3 leads
BAW56M
SC-101
leadless ultra small plastic package; 3 solder lands; body 1.0 0.6 0.5 mm
BAW56S
SC-88
plastic surface-mounted package; 6 leads
BAW56T
SC-75
plastic surface-mounted package; 3 leads
BAW56W
SC-70
plastic surface-mounted package; 3 leads
Version SOT363 SOT23 SOT883
SOT363 SOT416 SOT323
4. Marking
Table 5. Marking codes Type number BAV756S BAW56 BAW56M BAW56S BAW56T BAW56W
[1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China
5. Limiting values
Marking code[1] A7* A1* S5 A1* A1 A1*
BAV756S_BAW56_SER
Product data sheet
Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per diode
VRRM
repetitive peak reverse voltage
-
VR reverse voltage IF forward current
BAV756S BAW56 BAW56M BAW56S BAW56T BAW56W
Ts = 60 C Tamb 25 C Tamb 25 C Ts = 60 C Ts = 90 C Tamb 25 C
-
-
Max Unit
90 V
90 V
250 mA 215 mA 150 mA 250 mA 150 mA 150 mA
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 18 March 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
3 of 16
NXP Semiconductors
BAV756S; BAW56 series
High-speed switching diodes
Table 6. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
IFRM
repetitive peak forward
current
-
IFSM Ptot
Per device
non-repetitive peak forward current
total power dissipation BAV756S BAW56 BAW56M BAW56S BAW56T BAW56W
square wave tp = 1 s tp = 1 ms tp = 1 s
Ts = 60 C Tamb 25 C Tamb 25 C Ts = 60 C Ts = 90 C Tamb 25 C
[1]
-
[2]
[3] [4] -
IF
Tj Tamb Tstg
forward current BAV756S BAW56 BAW56M BAW56S BAW56T BAW56W
junction temperature ambient temperature storage temperature
Ts = 60 C Tamb 25 C Tamb 25 C Ts = 60 C Ts = 90 C Tamb 25 C
65 65
Max Unit 500 mA
4A 1A 0.5 A
350 mW 250 mW 250 mW 350 mW 170 mW 200 mW
100 125 75 100 75 130 150 +150 +150
mA mA mA mA mA mA C C C
[1] Tj = 25 C prior to surge. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[3] Reflow soldering is the only recommended soldering method.
[4] Single diode loaded.
6. Thermal characteristics
Table 7. Thermal characteristics
Symbol Parameter
Per diode
Rth(j-a)
thermal resistance from junction to ambient
BAW56
BAW56M
BAW56W
Conditions in free air
Min Typ Max Unit
[1]
- - 500 K/W [2] - .