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BAV756S Dataheets PDF



Part Number BAV756S
Manufacturers NXP
Logo NXP
Description High-speed switching diode array
Datasheet BAV756S DatasheetBAV756S Datasheet (PDF)

BAV756S; BAW56 series High-speed switching diodes Rev. 6 — 18 March 2015 Product data sheet 1. Product profile 1.1 General description High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package NXP JEITA BAV756S SOT363 SC-88 BAW56 BAW56M SOT23 SOT883 SC-101 BAW56S SOT363 SC-88 BAW56T BAW56W SOT416 SOT323 SC-75 SC-70 JEDEC - Package configuration very small TO-236AB small - leadless ultra sma.

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BAV756S; BAW56 series High-speed switching diodes Rev. 6 — 18 March 2015 Product data sheet 1. Product profile 1.1 General description High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package NXP JEITA BAV756S SOT363 SC-88 BAW56 BAW56M SOT23 SOT883 SC-101 BAW56S SOT363 SC-88 BAW56T BAW56W SOT416 SOT323 SC-75 SC-70 JEDEC - Package configuration very small TO-236AB small - leadless ultra small - very small - ultra small - very small Configuration quadruple common anode/common cathode dual common anode dual common anode quadruple common anode/common anode dual common anode dual common anode 1.2 Features and benefits  High switching speed: trr  4 ns  Low leakage current  Small SMD plastic packages  Low capacitance: Cd  2 pF  Reverse voltage: VR  90 V  AEC-Q101 qualified 1.3 Applications  High-speed switching  General-purpose switching 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Per diode IR reverse current VR reverse voltage trr reverse recovery time Conditions Min Typ VR = 80 V [1] - - [1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA. Max 0.5 90 4 Unit A V ns NXP Semiconductors BAV756S; BAW56 series High-speed switching diodes 2. Pinning information Table 3. Pinning Pin Description BAV756S 1 anode (diode 1) 2 cathode (diode 2) 3 common anode (diode 2 and diode 3) 4 cathode (diode 3) 5 anode (diode 4) 6 common cathode (diode 1 and diode 4) BAW56; BAW56T; BAW56W 1 cathode (diode 1) 2 cathode (diode 2) 3 common anode BAW56M 1 2 3 cathode (diode 1) cathode (diode 2) common anode BAW56S 1 2 3 4 5 6 cathode (diode 1) cathode (diode 2) common anode (diode 3 and diode 4) cathode (diode 3) cathode (diode 4) common anode (diode 1 and diode 2) Simplified outline Symbol 654 654 123 123 006aab103 33 12 006aaa144 12 006aab099 1 3 2 Transparent top view 3 12 006aab099 654 654 123 123 006aab102 BAV756S_BAW56_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 6 — 18 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 2 of 16 NXP Semiconductors BAV756S; BAW56 series High-speed switching diodes 3. Ordering information Table 4. Ordering information Type number Package Name Description BAV756S SC-88 plastic surface-mounted package; 6 leads BAW56 - plastic surface-mounted package; 3 leads BAW56M SC-101 leadless ultra small plastic package; 3 solder lands; body 1.0  0.6  0.5 mm BAW56S SC-88 plastic surface-mounted package; 6 leads BAW56T SC-75 plastic surface-mounted package; 3 leads BAW56W SC-70 plastic surface-mounted package; 3 leads Version SOT363 SOT23 SOT883 SOT363 SOT416 SOT323 4. Marking Table 5. Marking codes Type number BAV756S BAW56 BAW56M BAW56S BAW56T BAW56W [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Marking code[1] A7* A1* S5 A1* A1 A1* BAV756S_BAW56_SER Product data sheet Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Per diode VRRM repetitive peak reverse voltage - VR reverse voltage IF forward current BAV756S BAW56 BAW56M BAW56S BAW56T BAW56W Ts = 60 C Tamb  25 C Tamb  25 C Ts = 60 C Ts = 90 C Tamb  25 C - - Max Unit 90 V 90 V 250 mA 215 mA 150 mA 250 mA 150 mA 150 mA All information provided in this document is subject to legal disclaimers. Rev. 6 — 18 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 3 of 16 NXP Semiconductors BAV756S; BAW56 series High-speed switching diodes Table 6. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min IFRM repetitive peak forward current - IFSM Ptot Per device non-repetitive peak forward current total power dissipation BAV756S BAW56 BAW56M BAW56S BAW56T BAW56W square wave tp = 1 s tp = 1 ms tp = 1 s Ts = 60 C Tamb  25 C Tamb  25 C Ts = 60 C Ts = 90 C Tamb  25 C [1] - [2] [3] [4] - IF Tj Tamb Tstg forward current BAV756S BAW56 BAW56M BAW56S BAW56T BAW56W junction temperature ambient temperature storage temperature Ts = 60 C Tamb  25 C Tamb  25 C Ts = 60 C Ts = 90 C Tamb  25 C 65 65 Max Unit 500 mA 4A 1A 0.5 A 350 mW 250 mW 250 mW 350 mW 170 mW 200 mW 100 125 75 100 75 130 150 +150 +150 mA mA mA mA mA mA C C C [1] Tj = 25 C prior to surge. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [3] Reflow soldering is the only recommended soldering method. [4] Single diode loaded. 6. Thermal characteristics Table 7. Thermal characteristics Symbol Parameter Per diode Rth(j-a) thermal resistance from junction to ambient BAW56 BAW56M BAW56W Conditions in free air Min Typ Max Unit [1] - - 500 K/W [2] - .


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