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BAV74LT1 Monolithic Dual Switching Diode
Features
• Pb−Free Packages are Available
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ANODE 1 2 ANODE
MAXIMUM RATINGS (EACH DIODE)
Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 50 200 500 Unit Vdc mAdc mAdc
3 CATHODE
3 1 2
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR− 5 Board (Note 1), TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD 225 1.8 RqJA PD 300 2.4 RqJA TJ, Tstg 417 −55 to +150 mW mW/°C °C/W °C JA M G G 1 556 mW mW/°C °C/W SOT−23 CASE 318 STYLE 9 Max Unit
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.
JA = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location.
ORDERING INFORMATION
Device BAV74LT1 BAV74LT1G BAV74LT3 BAV74LT3G Package SOT−23 SOT−23 (Pb−Free) SOT−23 SOT−23 (Pb−Free) Shipping† 3000/Tape & Reel 3000/Tape & Reel 10,000/Tape & Reel 10,000/Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
1
March, 2006 − Rev. 4
Publication Order Number: BAV74LT1/D
BAV74LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic OFF CHARACTERISTICS Reverse Breakdown Voltage (I(BR) = 5.0 mAdc) Reverse Voltage Leakage Current, (Note 3) (VR = 50 Vdc, TJ = 125°C) (VR = 50 Vdc) Diode Capacitance (VR = 0, f = 1.0 MHz) Forward Voltage (IF = 100 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, measured at IR = 1.0 mA, RL = 100 W) 3. For each individual diode while the second diode is unbiased. V(BR) IR − − CD VF trr − − − 100 0.1 2.0 1.0 4.0 pF Vdc ns 50 − Vdc mAdc Symbol Min Max Unit
Curves Applicable to Each Anode
100 IF, FORWARD CURRENT (mA) TA = 85°C 10 TA = −40°C IR , REVERSE CURRENT (μA) 10
TA = 150°C TA = 125°C
1.0
0.1
TA = 85°C TA = 55°C
1.0
TA = 25°C
0.01 TA = 25°C 0 10 20 30 40 VR, REVERSE VOLTAGE (VOLTS) 50
0.1
0.2
0.4
0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS)
1.2
0.001
Figure 1. Forward Voltage
Figure 2. Leakage Current
1.0 CD, DIODE CAPACITANCE (pF)
0.9
0.8
0.7
0.6
0
2
4
6
8
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Capacitance
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2
BAV74LT1
PACKAGE DIMENSIONS
SOT−23 (TO−236) CASE 318−08 ISSUE AN
D
3 SEE VIEW C
E
1 2
HE .