BAV23S

DISCRETE POWER AND SIGNAL TECHNOLOGIES BAV23S HIGH VOLTAGE GENERAL PURPOSE DIODE PD . . . .350 mW @ TA = 25 Deg C BV . . . .250 V (MIN) @ IR = 100 uA TRR . . . 50 nS @ IF=IR = 30 mA IRR = 3.0 mA ABSOLUTE MAXIMUM RATINGS (NOTE 1) TEMPERATURES Storage Temperature Operating Junction Temperature POWER DISSIPATION (NOTES 2 & 3) Total Device Dissipation at TA = 25 Deg C Derating Factor per Degree C VOLTAGES & CURRENTS VRRM Repetitive Peak Reverse Voltage (Single Device) VRRM Repetitive Peak Reverse Voltage (Series Connection) VRWM Continuous Peak Reverse Voltage (Single Device) VRWM Continuous Peak Reverse Voltage (Series Connection) IO Average Rectified Current IF DC Forward Current if Recurrent Peak Forward Current if (surge) Peak Forward Surge Current Pulse Width = 1.0 microsec Pulse Width = 100 microsec Pulse Width = 10 millisec 150 Degrees C 150 Degrees C 350 mW 2.8 mW 250 V 500 V 200 V 400 V 200 mA 400 mA 700 mA 9.0 A 3.0 A 1.7 A 1 3 L30 1 2 PACKAGE TO-236AB (Low) (SOT-23) CONNECTION DIAGRAMS 3 2 ELECTRICAL CHARACTERISTICS (25 Degrees C Ambient Temperature unless otherwise stated) SYM BV IR CHARACTERISTICS Breakdown Voltage Reverse Current (single device) Reverse Current (series connection) MIN 250 MAX UNITS V TEST CONDITIONS IR = VR = VR = VR = VR = IF = IF = IF = IF = 100 uA 200 V 200 V 400 V 400 V 100 mA 200 mA 100 mA 200 mA 100 100 100 100 1.00 1.25 2.00 2.50 50 nA uA nA uA V V V V nS TA = +150 Deg C TA = +150 Deg C VF Forward Voltage (single device) Forw...