Small Signal Diodes
BAV19 THRU BAV21
Small Signal Diodes
DO-35
min. 1.083 (27.5)
FEATURES ♦ Silicon Epitaxial Planar Diodes ♦ For general p...
Description
BAV19 THRU BAV21
Small Signal Diodes
DO-35
min. 1.083 (27.5)
FEATURES ♦ Silicon Epitaxial Planar Diodes ♦ For general purpose ♦ These diodes are also available in other
max. ∅.079 (2.0)
Cathode Mark
min. 1.083 (27.5)
case styles including: the SOD-123 case with the type designation BAV19W - BAV21W, the MiniMELF case with the type designation BAV101 - BAV103, and the SOT-23 case with the type designation BAS19 - BAS21.
max. .150 (3.8)
max. ∅.020 (0.52)
MECHANICAL DATA
Case: DO-35 Glass Case Weight: approx. 0.13 g
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol Reverse Voltage BAV19 BAV20 BAV21 VR VR VR IF I0
Value 120 200 250 2501) 2001)
Unit V V V mA mA
Forward DC Current at Tamb = 25 °C Rectified Current (Average) Half Wave Rectification with Resist. Load at Tamb = 25 °C and f ≥ 50 Hz Repetitive Peak Forward Current at f ≥ 50 Hz, Θ = 180 °, Tamb = 25 °C Surge Forward Current at t < 1 s, Tj = 25 °C Power Dissipation at Tamb = 25 °C Junction Temperature Storage Temperature Range
1)
IFRM IFSM Ptot Tj TS
6251) 1 5001) 1751) –65 to +1751)
mA A mW °C °C
Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case
4/98
BAV19 THRU BAV21
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol Forward voltage at IF = 100 mA Leakage Current at VR = 100 V at VR = 100 V, Tj = 100 °C at VR = 1...
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