BAV199F

BAV199... Silicon Low Leakage Diode Low-leakage applications Medium speed switching times Series pair configuration BAV199 BAV199F 3 D 1 D 2 1 2 Type BAV199 BAV199F* * Preliminary Package SOT23 TSFP-3 Configuration series series Marking JYs JYs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol VR VRM IF I FSM Value Unit Diode reverse voltage Peak reverse voltage Forward current Non-repetitive peak surge forward current t = 1 µs t=1s 80 85 200 4.5 0.5 V mA A Total power dissipation BAV199, TS ≤ 31°C BAV199F, TS ≤ tbd Junction temperature Storage temperature Ptot mW 330 250 Tj T stg 150 -65 ... 150 °C 1 Mar-10-2004 BAV199... Thermal Resistance Parameter Symbol RthJS Value ≤ 360 ≤ tbd Unit Junction - soldering point1) BAV199 BAV199F K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics 85 V Breakdown voltage V(BR) I(BR) = 100 µA Reverse current VR = 75 V VR = 75 V, TA = 150 °C Forward voltage IF = 1 mA IF = 10 mA IF = 50 mA IF = 150 mA AC Characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF = 10 mA, IR = 10 mA, measured at IR = 1mA , RL = 100 Ω Test circuit for reverse recovery time D.U.T. IR VF CT t rr 2 0.6 900 1000 1100 1250 1.5 5 80 nA mV pF µs Pulse generator: tp = 10µs, D = 0.05, tr = 0.6ns, Ri = 50Ω Oscillograph ΙF Oscillograph: R = 50Ω, tr = 0.35ns, C ≤ 1pF EHN00019 1For calculation of RthJA please r...