BAV19

BAV19 / BAV20 / BAV21 BAV19 / 20 / 21 DO-35 High Voltage General Purpose Diode Sourced from Process 1J. Absolute Maximum Ratings* Symbol W IV Working Inverse Voltage TA = 25°C unless otherwise noted Parameter BAV19 BAV20 BAV21 Value 100 150 200 200 500 600 1.0 4.0 -65 to +200 175 Units V V V mA mA mA A A °C °C IO IF if if(surge) Average Rectified Current DC Forward Current Recurrent Peak Forward Current Peak Forward Surge Current Pulse width = 1.0 second Pulse width = 1.0 microsecond Storage Temperature Range Operating Junction Temperature Tstg TJ *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Max BAV19 / 20 / 21 500 3.33 300 Units mW mW/°C °C/W 2000 Fairchild Semiconductor International BAV19/20/21, Rev. A BAV19 / BAV20 / BAV21 High Voltage General Purpose Diode (continued) Electrical Characteristics Symbol BV TA = 25°C unless otherwise noted Parameter Breakdown Voltage BAV19 BAV20 BAV21 BAV19 BAV20 BAV21 Test Conditions IR = 100 µ A IR = 100 µ A IR = 100 µ A VR = 100 V VR = 100 V, TA = 150°C VR = 150 V VR = ...