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BAV19

General Semiconductor

Small Signal Diodes

BAV19 THRU BAV21 Small Signal Diodes DO-35 min. 1.083 (27.5) FEATURES ♦ Silicon Epitaxial Planar Diodes ♦ For general p...


General Semiconductor

BAV19

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BAV19 THRU BAV21 Small Signal Diodes DO-35 min. 1.083 (27.5) FEATURES ♦ Silicon Epitaxial Planar Diodes ♦ For general purpose ♦ These diodes are also available in other max. ∅.079 (2.0) Cathode Mark min. 1.083 (27.5) case styles including: the SOD-123 case with the type designation BAV19W - BAV21W, the MiniMELF case with the type designation BAV101 - BAV103, and the SOT-23 case with the type designation BAS19 - BAS21. max. .150 (3.8) max. ∅.020 (0.52) MECHANICAL DATA Case: DO-35 Glass Case Weight: approx. 0.13 g Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Reverse Voltage BAV19 BAV20 BAV21 VR VR VR IF I0 Value 120 200 250 2501) 2001) Unit V V V mA mA Forward DC Current at Tamb = 25 °C Rectified Current (Average) Half Wave Rectification with Resist. Load at Tamb = 25 °C and f ≥ 50 Hz Repetitive Peak Forward Current at f ≥ 50 Hz, Θ = 180 °, Tamb = 25 °C Surge Forward Current at t < 1 s, Tj = 25 °C Power Dissipation at Tamb = 25 °C Junction Temperature Storage Temperature Range 1) IFRM IFSM Ptot Tj TS 6251) 1 5001) 1751) –65 to +1751) mA A mW °C °C Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case 4/98 BAV19 THRU BAV21 ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Forward voltage at IF = 100 mA Leakage Current at VR = 100 V at VR = 100 V, Tj = 100 °C at VR = 1...




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