DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
BAT960 Schottky barrier diode
Product data sheet Supersedes data of 2002 Jun...
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
BAT960
Schottky barrier diode
Product data sheet Supersedes data of 2002 Jun 24
2003 May 01
NXP Semiconductors
Schottky barrier diode
Product data sheet
BAT960
FEATURES High current capability Very low forward voltage Ultra small plastic SMD package Flat leads: excellent coplanarity and improved thermal
behaviour.
APPLICATIONS Ultra high-speed switching rectification DC/DC conversion Switch mode power supply Inverse polarity protection.
PINNING
PIN 1 cathode 2 cathode 3 anode 4 anode 5 cathode 6 cathode
DESCRIPTION
handbook, halfpag6e 5 4
GENERAL DESCRIPTION
Planar
Schottky barrier diode with an integrated guard ring for stress protection in a SOT666 ultra small SMD plastic package.
123
1, 2 5, 6
3, 4
MHC310
Marking code: B9.
Fig.1 Simplified outline (SOT666) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
VR continuous reverse voltage IF continuous forward current IFSM non-repetitive peak forward current
Tstg Tj Tamb
storage temperature junction temperature operating ambient temperature
CONDITIONS
t = 8.3 ms half sinewave; JEDEC method; note 1
Note 1. Only valid, if pins 3 and 4 are connected in parallel.
MIN. − − −
MAX. 23 1 8
UNIT V A A
−65
+150
°C
− 125 °C
−65
+125
°C
2003 May 01
2
NXP Semiconductors
Schottky barrier diode
Product data sheet
BAT960
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resis...