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BAT721S Dataheets PDF



Part Number BAT721S
Manufacturers NXP
Logo NXP
Description Schottky barrier double diodes
Datasheet BAT721S DatasheetBAT721S Datasheet (PDF)

1PS76SB21; BAT721 series Schottky barrier diodes in small packages Rev. 06 — 21 December 2006 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier diodes with an integrated guard ring for stress protection. Encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package NXP 1PS76SB21 SOD323 BAT721 SOT23 BAT721A SOT23 BAT721C SOT23 BAT721S SOT23 JEITA SC-76 - Configuration single single dual comm.

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1PS76SB21; BAT721 series Schottky barrier diodes in small packages Rev. 06 — 21 December 2006 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier diodes with an integrated guard ring for stress protection. Encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package NXP 1PS76SB21 SOD323 BAT721 SOT23 BAT721A SOT23 BAT721C SOT23 BAT721S SOT23 JEITA SC-76 - Configuration single single dual common anode dual common cathode dual series 1.2 Features I Low forward voltage I Small SMD plastic packages I Low capacitance 1.3 Applications I Ultra high-speed switching I Voltage clamping I Line termination I Reverse polarity protection 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Per diode IF forward current VR reverse voltage VF forward voltage [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. Conditions IF = 200 mA Min Typ Max Unit - - 200 mA - - 40 V [1] - - 550 mV NXP Semiconductors 1PS76SB21; BAT721 series Schottky barrier diodes in small packages 2. Pinning information Table 3. Pinning Pin Description 1PS76SB21 1 cathode 2 anode BAT721 1 2 3 anode not connected cathode BAT721A 1 2 3 cathode (diode 1) cathode (diode 2) anode (diode 1), anode (diode 2) BAT721C 1 2 3 anode (diode 1) anode (diode 2) cathode (diode 1), cathode (diode 2) BAT721S 1 2 3 anode (diode 1) cathode (diode 2) cathode (diode 1), anode (diode 2) [1] The marking bar indicates the cathode. Simplified outline Symbol [1] 1 2 12 sym001 3 1 12 006aaa144 3 2 n.c. 006aaa436 3 12 006aaa144 1 3 2 006aaa439 33 1 12 006aaa144 2 006aaa438 3 12 006aaa144 1 3 2 006aaa437 1PS76SB21_BAT721_SER_6 Product data sheet Rev. 06 — 21 December 2006 © NXP B.V. 2006. All rights reserved. 2 of 11 NXP Semiconductors 1PS76SB21; BAT721 series Schottky barrier diodes in small packages 3. Ordering information Table 4. Ordering information Type number Package Name Description 1PS76SB21 SC-76 plastic surface-mounted package; 2 leads BAT721 - plastic surface-mounted package; 3 leads BAT721A BAT721C BAT721S 4. Marking Table 5. Marking codes Type number 1PS76SB21 BAT721 BAT721A BAT721C BAT721S [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Marking code[1] S1 L7* L8* L9* L0* Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Per diode VR IF IFSM Tj Tamb Tstg reverse voltage forward current non-repetitive peak forward current junction temperature ambient temperature storage temperature half sine wave; JEDEC method; tp = 8.3 ms - −65 −65 Version SOD323 SOT23 Max Unit 40 V 200 mA 1A 125 +150 +150 °C °C °C 1PS76SB21_BAT721_SER_6 Product data sheet Rev. 06 — 21 December 2006 © NXP B.V. 2006. All rights reserved. 3 of 11 NXP Semiconductors 1PS76SB21; BAT721 series Schottky barrier diodes in small packages 6. Thermal characteristics Table 7. Thermal characteristics Symbol Parameter Per diode Rth(j-a) thermal resistance from junction to ambient 1PS76SB21 BAT721 BAT721A BAT721C BAT721S Conditions in free air Min Typ Max Unit [1] - - 450 K/W - - 500 K/W - - 500 K/W - - 500 K/W - - 500 K/W [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 7. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Per diode VF forward voltage IF = 10 mA IF = 100 mA IF = 200 mA IR reverse current VR = 30 V VR = 30 V; Tj = 100 °C Cd diode capacitance VR = 0 V; f = 1 MHz [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. Min Typ Max Unit [1] - - 300 mV [1] - - 420 mV [1] - - 550 mV - - 15 µA --3 mA - 40 50 pF 1PS76SB21_BAT721_SER_6 Product data sheet Rev. 06 — 21 December 2006 © NXP B.V. 2006. All rights reserved. 4 of 11 NXP Semiconductors 1PS76SB21; BAT721 series Schottky barrier diodes in small packages 103 IF (mA) 102 10 006aaa689 (1) (2) (3) (4) 1 10−1 0 200 400 600 VF (mV) (1) Tamb = 125 °C (2) Tamb = 85 °C (3) Tamb = 25 °C (4) Tamb = −40 °C Fig 1. Forward current as a function of forward voltage; typical values 102 Cd (pF) 10 10 IR (mA) 1 10−1 006aaa690 (1) (2) 10−2 10−3 (3) 10−4 10−5 (4) 10−6 0 10 20 30 40 VR (V) (1) Tamb = 125 °C (2) Tamb = 85 °C (3) Tamb = 25 °C (4) Tamb = −40 °C Fig 2. Reverse current as a function of reverse voltage; typical values mbk574 1 0 10 20 30 VR (V) 40 Tamb = 25 °C; f = 1 MHz Fig 3. Diode capacitance as a function of reverse voltage; typical values 1PS76SB21_BAT721_SER_6 Product data sheet Rev. 06 — 21 December 2006 © NXP B.V. 2006. All rights reserved. 5 of 11 NXP Semiconductors 8. Package outline 1PS76SB21; BAT721 series Schottky barrier diodes in small packages 1.35 1.15 1 0.45 0.15 1.1 0.8 2.7 1.8 2.3 1.6 2.5 1.4 2.1 1.2 3.0 2.8 3 1.1 0.9 0.45 0.15 Dimensions in .


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