BAT66...
Silicon Schottky Diode
Power rectifier diode For low-loss, fast-recovery rectification,
meter protection, ...
BAT66...
Silicon
Schottky Diode
Power rectifier diode For low-loss, fast-recovery rectification,
meter protection, bias isolation and clamping purpose
BAT66-05
4
D 1
D 2
1
2
3
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BAT66-05
Parameter
Package SOT223
Configuration common cathode
Symbol VR IF IFSM IFAV Ptot Tj Tstg Symbol RthJS Value
Marking BAT66-05
Unit
Maximum Ratings at TA = 25°C, unless otherwise specified
Diode reverse voltage Forward current Surge forward current, (t 10ms) Average forward current (50/60Hz, sinus) Total power dissipation
TS 126°C
30 2 10 1 1.2 150 -55 ... 150
Value
V A
W °C
Junction temperature Storage temperature
Thermal Resistance Parameter
Unit
Junction - soldering point1)
1For
20
K/W
calculation of RthJA please refer to Application Note Thermal Resistance
1
Feb-14-2003
BAT66...
Electrical Characteristics at T A = 25°C, unless otherwise specified Symbol Values Parameter min. typ. max. DC Characteristics Reverse current VR = 25 V VR = 25 V, TA = 85 °C Forward voltage I F = 10 mA I F = 100 mA IF = 1 A VF 0.28 0.35 0.47 0.35 0.6 IR 10 1000 V
Unit
µA
AC Characteristics Diode capacitance VR = 10 V, f = 1 MHz
CT
-
30
40
pF
2
Feb-14-2003
BAT66...
Reverse current IR = (VR) TA = Parameter
10 4
BAT 66-05 EHB00063
Forward current IF = (VF)
10 3
BAT 66-05
EHB00062
ΙR
µA 10 3 TA = 125 ˚C
ΙR
mA
10 2 10 2 85 ˚C 10 1 10 1 10 0 TA = 25 ˚C 85 ˚C
10
0
25 ˚C
10 -1 0 10 ...