Silicon Schottky Diode • Low barrier diode for detectors up to GHz
frequencies
• Pb-free (RoHS compliant) package
BAT62...
Silicon
Schottky Diode Low barrier diode for detectors up to GHz
frequencies
Pb-free (RoHS compliant) package
BAT62...
BAT62
"!
, ,
BAT62-09S
$#
"
, ,
!
BAT62-03W BAT62-02V BAT62-02W
BAT62-07W
"!
, ,
BAT62-02L BAT62-02LS
12
BAT62-07L4
4
D1
1
3
D2
2
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type BAT62-02W** BAT62 BAT62-02L BAT62-02LS* BAT62-02V BAT62-03W BAT62-07L4 BAT62-07W BAT62-09S
Package SCD80 SOT143 TSLP-2-1 TSSLP-2-1 SC79 SOD323 TSLP-4-4 SOT343 SOT363
Configuration single anti-parallel pair single, leadless single, leadless single single parallel pair, leadless parallel pair parallel high, high isolation
LS(nH) 0.6 2 0.4 0.2 0.6 1.8 0.4 1.8 1.6
Marking 62 62s L U k white L 62 62s 69s
* Preliminary Data ** Not for new design
1 2014-02-13
BAT62...
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
Forward current
Total power dissipation
BAT62, TS ≤ 85 °C BAT62-02L, -07L4, -03W, TS ≤ 108 °C BAT62-02W, -02V, TS ≤ 109 °C BAT62-07W, TS ≤ 103 °C BAT62-09S, TS ≤ 105 °C
VR IF Ptot
Junction temperature Storage temperature
Tj Tstg
Thermal Resistance
Parameter Junction - soldering point1) BAT62 BAT62-02L, -07L4, -03W BAT62-02W, 02V BAT62-07W BAT62-09S
Symbol RthJS
Value 40 20
100 100 100 100 100 150 -55 ... 150
Value
≤ 650 ≤ 420 ≤ 410 ≤ 470 ≤ tbd
Unit V mA
°C Unit
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
...