BAT62

Silicon Schottky Diode q Low BAT 62 barrier diode for detectors up to GHz frequencies. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAT 62 Marking 62 Ordering Code Pin Configuration (tape and reel) Q62702-A971 Package1) SOT-143 Maximum Ratings per Diode Parameter Reverse voltage Forward current Total power dissipation, TS ≤ 85 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol VR IF Ptot Tj Tstg Values 40 20 100 150 – 55 … + 150 Unit V mA mW ˚C 810 650 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm. Semiconductor Group 1 02.96 BAT 62 Electrical Characteristics per Diode at TA = 25 ˚C, unless otherwise specified. Parameter Reverse current VR = 40 V Forward voltage IF = 2 mA Diode capacitance VR = 0, f = 1 MHz Case capacitance Differential resistance VR = 0, f = 10 kHz Series inductance Symbol min. IR VF CT CC R0 LS – – – – – – Values typ. – 0.58 0.35 0.1 225 2 max. 10 1 0.6 – – – kΩ nH µA Unit V pF Forward current IF = f (VF) Forward current IF = f (TS; TA*) *Package mounted on alumina Semiconductor Group 2 BAT 62 Reverse current IR = f (VR) f = 1 MHz Diode capacitance CT = f (VR) f = 1 MHz Rectifier voltage V0 = f (Vi) f = 900 MHz Semiconductor Group 3 ...