BAT54SWT1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BAT54SWT1/D Dual Series Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Extremely Fast Switching Speed Low Forward Voltage — 0.35 Volts (Typ) @ IF = 10 mAdc BAT54SWT1 Motorola Preferred Device 30 VOLT DUAL SERIES SCHOTTKY BARRIER DIODES 1 ANODE 2 CATHODE 3 CATHODE/ANODE 1 2 3 CASE 419 – 02, STYLE 9 SOT– 323 (SC – 70) MAXIMUM RATINGS (TJ = 125°C unless otherwise noted) Rating Reverse Voltage Forward Power Dissipation @ TA = 25°C Derate above 25°C Forward Current (DC) Junction Temperature Storage Temperature Range Symbol VR PF 200 1.6 IF TJ Tstg 200 Max 125 Max – 55 to +150 mW mW/°C mA °C °C Value 30 Unit Volts DEVICE MARKING BAT54SWT1 = B8 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Characteristic Reverse Breakdown Voltage (IR = 10 µA) Total Capacitance (VR = 1.0 V, f = 1.0 MHz) Reverse Leakage (VR = 25 V) Forward Voltage (IF = 0.1 mAdc) Forward Voltage (IF = 30 mAdc) Forward Voltage (IF = 100 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1 Forward Voltage (IF = 1.0 mAdc) Forward Voltage (IF = 10 mAdc) Forward Current (DC) Repetitive Peak Forward Current Non–Repetitive Peak Forward C...