BAT54LT1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BAT54LT1/D Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Extremely Fast Switching Speed Low Forward Voltage — 0.35 Volts (Typ) @ IF = 10 mAdc 3 CATHODE 1 ANODE BAT54LT1 Motorola Preferred Device 30 VOLTS SILICON HOT–CARRIER DETECTOR AND SWITCHING DIODES 3 1 2 CASE 318 – 08, STYLE 8 SOT– 23 (TO – 236AB) MAXIMUM RATINGS (TJ = 125°C unless otherwise noted) Rating Reverse Voltage Forward Power Dissipation @ TA = 25°C Derate above 25°C Forward Current (DC) Junction Temperature Storage Temperature Range Symbol VR PF 200 2.0 IF TJ Tstg 200 Max 125 Max – 55 to +150 mW mW/°C mA °C °C Value 30 Unit Volts DEVICE MARKING BAT54LT1 = LV3 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 µA) Total Capacitance (VR = 1.0 V, f = 1.0 MHz) Reverse Leakage (VR = 25 V) Forward Voltage (IF = 0.1 mAdc) Forward Voltage (IF = 30 mAdc) Forward Voltage (IF = 100 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1 Forward Voltage (IF = 1.0 mAdc) Forward Voltage (IF = 10 mAdc) Forward Current (DC) Repetitive Peak Forward Current Non–Repetitive Peak Forward Current (t < 1.0 s) Thermal C...