Silicon Dual Schottky Diode (DBS mixer application to 12 GHz Low noise figure Low barrier type)
Silicon Dual Schottky Diode
BAT 15-099
Preliminary Data
Features DBS mixer application to 12 GHz q Low noise figure q...
Silicon Dual
Schottky Diode
BAT 15-099
Preliminary Data
Features DBS mixer application to 12 GHz q Low noise figure q Low barrier type
q
ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAT 15-099 Marking S5 Ordering Code (tape and reel) Q62702-A66 Pin Configuration Package1) P-SOT-143-4-6
Maximum Ratings Parameter Reverse voltage Forward current Power dissipation, TS ≤ 55 ˚C Storage temperature range Operating temperature range Thermal Resistance Junction - ambient2) Junction - soldering point
1) 2)
Symbol VR IF Ptot Tstg Top
Values 4 110 100 – 55 … + 150
Unit V mA mW
– 55 … + 150 ˚C
Rth JA Rth JS
≤ ≤
1090 930
K/W
For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.
Semiconductor Group
1
01.97
BAT 15-099
Electrical Characteristics per Diode at TA = 25 ˚C, unless otherwise specified. Parameter Breakdown voltage IR = 5 µA Forward voltage IF = 1 mA IF = 10 mA Forward voltage matching IF = 10 mA Diode capacitance VR = 0, f = 1 MHz Forward resistance IF = 10 mA/50 mA Symbol min. V(BR) VF – – ∆VF CT RF – – – 0.23 0.32 – – 5.5 – – 20 0.35 – mV pF Ω 4 Values typ. – max. – V Unit
Semiconductor Group
2
BAT 15-099
Forward current IF = f (VF)
Forward current IF = f (TS; TA*) *Package mounted on alumina If
Reverse current IR = f (VR)
Diode capacitance CT = f (VR) f = 1 MHz
Semiconductor Group
3
BAT 15-099
S11-Parameters Typical impedance characteristics (with external bia...