Silicon Schottky Diode (DBS mixer applications to 12 GHz Low noise figure Low barrier type)
BAT 15-03W Silicon Schottky Diode
• DBS mixer applications to 12 GHz • Low noise figure • Low barrier type
ESD: Electro...
BAT 15-03W Silicon
Schottky Diode
DBS mixer applications to 12 GHz Low noise figure Low barrier type
ESD: ElectroStatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code Q62702Q62702-A1104 Pin Configuration 1=A 2=C Package SOD-323 BAT 15-03W P/white
Maximum Ratings Parameter Diode reverse voltage Forward current Total power dissipation TS = 70°C Operating temperature range Storage temperature Thermal Resistance Junction ambient
1)
Symbol
Values 4 100 100 - 55 ... + 150 - 55 ... + 150 ≤ 770 ≤ 690
Unit V mA mW °C
VR IF Ptot Top Tstg RthJA RthJS
K/W
Junction - soldering point
1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm2 Cu
Semiconductor Group
1
Mar-19-1996
BAT 15-03W
Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Breakdown voltage Values typ. max. Unit
V(BR)
4 0.23 0.32 0.32 0.41
V
I(BR) = 5 µA
Forward voltage
VF
-
IF = 1 mA IF = 10 mA
AC characteristics Diode capacitance
CT
5.5 0.35
pF Ω -
VR = 0 , f = 1 MHz
Differential forward resistance
RF
IF 10mA/ 50 mA
Semiconductor Group
2
Mar-19-1996
BAT 15-03W
Forward Current IF = f(VF)
Reverse current IR = f (TA)
Diode capacitance CT = f (VR) f = 1MHz
Semiconductor Group
3
Mar-19-1996
BAT 15-03W
Package
Semiconductor Group
4
Mar-19-1996
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