BAS85T-01I
SILICON SCHOTTKY BARRIER DIODE
Features
· · · For general applications Low turn-on voltage PN junction guard...
BAS85T-01I
SILICON
SCHOTTKY BARRIER DIODE
Features
· · · For general applications Low turn-on voltage PN junction guard ring
C A B
Min A B C 3.4 1.40 0.20
Max 3.6 1.50 0.40
All dimensions in mm
Mechanical Data
· · Glass case Weight: 0.05g (approx)
Maximum Ratings
@ TA = 25°C unless otherwise specified
Symbol VR IF IFM @ tp = 1s @ TA = 65°C IFSM Ptot Tj TA TSTG Value 30 200 300 600 250 125 -65 to +125 -65 to +150 Unit V mA mA mA mW °C °C °C
Characteristic Continuous reverse voltage Forward continuous current* Peak forward current * Surge forward current* Power dissipation* Junction temperature Operating temperature range Storage temperature range
Electrical Characteristics
Characteristic Reverse breakdown voltage
@ Tj = 25°C unless otherwise specified
Symbol V(BR)R Min 30 Typ — Max — Unit V
10 µA pulses * Valid provided that electrodes are kept at ambient temperature.
DIODES INC 3050 East Hillcrest Drive, Westlake Village, CA 91362-3154 TEL: (805) 446-4800 FAX: (805) 446-4850 Document Number: 11004 Revision A- 5 Page 1 of 1 FAX-BACK: (805) 446-4870 www.diodes.com
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