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BAS40-T1

Infineon Technologies AG

HiRel Silicon Schottky Diode

BAS40 HiRel Silicon Schottky Diode • • • • • • • HiRel Discrete and Microwave Semiconductor General-purpose diodes for h...


Infineon Technologies AG

BAS40-T1

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Description
BAS40 HiRel Silicon Schottky Diode HiRel Discrete and Microwave Semiconductor General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing Hermetically sealed microwave package Space Qualification Expected 1998 ESA/SCC Detail Spec. No.: 5512/020 Type Variant No. 03 (tbc.) ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAS40-T1 (ql) Marking - Ordering Code see below Pin Configuration Package T1 1 Ordering Code: Ordering Code: Ordering Code: 2 (ql) Quality Level: P: Professional Quality, H: High Rel Quality, S: Space Quality, Q62702A1176 on request on request (see order instructions for ordering example) Semiconductor Group 1 of 4 Draft B, September 99 BAS40 Maximum Ratings Parameter Reverse Voltage Forward Current Surge Forward Current Power Dissipation 2) 1) Symbol VR IF IFSM Ptot Top Tstg Tsol Tj Rth(j-c) Values 40 120 170 250 -55 to +150 -55 to +150 +250 150 100 Unit V mA mA mW °C °C °C °C K/W Operating Temperature Range Storage Temperature Range Soldering Temperature Junction Temperature Thermal Resistance Junction-Case Electrical Characteristics at TA=25°C; unless otherwise specified Parameter 3) Symbol min. Values typ. max. Unit DC Characteristics Reverse Current 1 VR=40V Reverse Current 2 VR=30V Forward Voltage 1 IF1=1mA Forward Voltage 2 IF2=10mA Forward Voltage 3 IF3=40mA Differential Forward Resistance IF=10mA, IF=15mA AC Characteristics Tot...




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