BAS40-06LT1

BAS40-06LT1 Preferred Device Common Anode Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. http://onsemi.com Extremely Fast Switching Speed Low Forward Voltage — 0.50 Volts (Typ) @ IF = 10 mAdc Device Marking: L2 40 VOLTS SCHOTTKY BARRIER DIODE 3 1 2 MAXIMUM RATINGS (TJ = 150°C unless otherwise noted) Symbol VR Reverse Voltage Rating Value 40 Unit Volts THERMAL CHARACTERISTICS Symbol PF Characteristic Forward Power Dissipation @ TA = 25°C Derate above 25°C Operating Junction and Storage Temperature Range Max 225 1.8 –55 to +150 Unit mW mW/°C °C PLASTIC SOT–23 (TO–236AB) CASE 318 TJ, Tstg ANODE 3 CATHODE 1 2 CATHODE ORDERING INFORMATION Device BAS40–06LT1 Package SOT–23 Shipping 3000 / Tape & Reel Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2000 1 April, 2000 – Rev. 3 Publication Order Number: BAS40–06LT1/D BAS40–06LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 µA) Total Capacitance (VR = 1.0 V, f = 1.0 MHz) Reverse Leakage (VR = 25 V) Forward Voltage (IF = 0.1 mAdc) Forward Voltage (IF = 30 mAdc) Forward Voltage (IF = 100 mAdc) Symbol V(BR)R CT IR ...