BAS40-06LT1
Preferred Device
Common Anode Schottky Barrier Diodes
These Schottky barrier diodes are designed for high s...
BAS40-06LT1
Preferred Device
Common Anode
Schottky Barrier Diodes
These
Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited.
http://onsemi.com
Extremely Fast Switching Speed Low Forward Voltage — 0.50 Volts (Typ) @ IF = 10 mAdc Device Marking: L2
40 VOLTS
SCHOTTKY BARRIER DIODE
3 1 2
MAXIMUM RATINGS (TJ = 150°C unless otherwise noted)
Symbol VR Reverse Voltage Rating Value 40 Unit Volts
THERMAL CHARACTERISTICS
Symbol PF Characteristic Forward Power Dissipation @ TA = 25°C Derate above 25°C Operating Junction and Storage Temperature Range Max 225 1.8 –55 to +150 Unit mW mW/°C °C
PLASTIC SOT–23 (TO–236AB) CASE 318
TJ, Tstg
ANODE 3
CATHODE 1 2 CATHODE
ORDERING INFORMATION
Device BAS40–06LT1 Package SOT–23 Shipping 3000 / Tape & Reel
Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2000
1
April, 2000 – Rev. 3
Publication Order Number: BAS40–06LT1/D
BAS40–06LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Reverse Breakdown Voltage (IR = 10 µA) Total Capacitance (VR = 1.0 V, f = 1.0 MHz) Reverse Leakage (VR = 25 V) Forward Voltage (IF = 0.1 mAdc) Forward Voltage (IF = 30 mAdc) Forward Voltage (IF = 100 mAdc) Symbol V(BR)R CT IR ...