BAS16WT1

www.DataSheet4U.com BAS16WT1 Preferred Device Silicon Switching Diode Features Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS (TA = 25°C) Rating Continuous Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current Pulse Width = 10 ms Total Power Dissipation, One Diode Loaded TA = 25°C Derate above 25°C Mounted on a Ceramic Substrate (10 x 8 x 0.6 mm) Operating and Storage Junction Temperature Range Symbol VR IR IFM(surge) Value 75 200 500 Unit V mA mA 3 CATHODE 1 ANODE 3 MARKING DIAGRAM PD 200 1.6 mW mW/°C °C 1 2 A6D TJ, Tstg −55 to +150 SC−70 CASE 419 STYLE 2 A6 D = Specific Device Code = Date Code Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. ORDERING INFORMATION Device Package SC−70 SC−70 (Pb−Free) Shipping† 3000 / Tape & Reel 3000 / Tape & Reel THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient One Diode Loaded Mounted on a Ceramic Substrate (10 x 8 x 0.6 mm) Symbol RqJA Max 625 Unit °C/W BAS16WT1 BAS16WT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recomme...