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BAS16WT1

Part Number	BAS16WT1
Manufacturer	Motorola Inc
Description	Silicon Switching Diode
Published	Mar 26, 2005
Detailed Description	MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BAS16WT1/D Silicon Switching Diode 3 CATHODE 1 ANODE BA...
Datasheet	BAS16WT1 PDF File

Overview

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BAS16WT1/D Silicon Switching Diode 3 CATHODE 1 ANODE BAS16WT1 Motorola Preferred Device 3 MAXIMUM RATINGS (TA = 25°C) Rating Continuous Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current Pulse Width = 10 µs Total Power Dissipation, One Diode Loaded TA = 25°C Derate above 25°C Mounted on a Ceramic Substrate (10 x 8 x 0.
6 mm) Operating and Storage Junction Temperature Range Symbol VR IR IFM(surge) PD Max 75 200 500 200 1.
6 Unit V mA mA mW mW/°C 1 2 CASE 419–02, STYLE 2 SC–70/SOT–323 TJ, Tstg – 55 to +150 °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient One Diode Load...

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