Document
Silicon Switching Diode • For high-speed switching applications • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101
BAS16...
BAS16 BAS16W
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BAS16-02L BAS16-02V BAS16-02W BAS16-03W
BAS16S BAS16U
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BAS16-07L4
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Type BAS16 BAS16-02L* BAS16-02V BAS16-02W BAS16-03W BAS16-07L4* BAS16S BAS16U BAS16W
* Preliminary Data
Package
SOT23 TSLP-2-1 SC79 SCD80 SOD323 TSLP-4-4 SOT363 SC74 SOT323
Configuration
single single, leadless single single single parallel pair, leadless parallel triple parallel triple single
1Pb-containing package may be available upon special request
Marking
A6s A6 6 A6 white B 6A A6s A6s A6s
1 2009-09-28
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage Peak reverse voltage Forward current BAS16
VR VRM IF
BAS16-02L, -07L4
BAS16-02V, -02W
BAS16-03W
BAS16S
BAS16U
BAS16W
Non-repetitive peak surge forward current t = 1 µs, BAS16/ S/ U/ W/ -03W t = 1 µs, BAS16-02L/ -02V/ -02W/ -07L4 t=1s
Total power dissipation BAS16, TS ≤ 54 °C BAS16-02L, -07L4, TS ≤ 130 °C BAS16-02V, -02W, TS ≤ 120 °C BAS16-03W, TS ≤ 116 °C BAS16S, TS ≤ 85 °C BAS16U, TS ≤ 113 °C BAS16W, TS ≤ 119 °C
Junction temperature
Storage temperature
IFSM Ptot
Tj Tstg
BAS16...
Value 80 85
250 200 200 250 200 200 250
4.5 2.5 0.5
370 250 250 250 250 250 250
150 -65 ...150
Unit V mA
A mW
°C
2 2009-09-28
BAS16...
Thermal Resistance Parameter Junction - soldering point1) BAS16, BAS16S BAS16-02L, -07L4 BAS16-02V, -02W BAS16-03W BAS16U BAS16W
Symbol RthJS
Value
≤ 260 ≤ 80 ≤ 120 ≤ 135 ≤ 150 ≤ 125
Unit K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Breakdown voltage
V(BR)
85 -
-
I(BR) = 100 µA
Reverse current
IR
VR = 75 V
--1
VR = 25 V, TA = 150 °C
- - 30
VR = 75 V, TA = 150 °C
- - 50
Unit V µA
Forward voltage
IF = 1 mA IF = 10 mA IF = 50 mA IF = 100 mA IF = 150 mA
VF mV - - 715 - - 855 - - 1000 - - 1200 - - 1250
Forward recovery voltage IF = 10 mA, tP = 20 ns
Vfr -
1For calculation of RthJA please refer to Application Note Thermal Resistance
- 1.75 V
3 2009-09-28
BAS16...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ.
AC Characteristics
Diode capacitance
CT - -
VR = 0 V, f = 1 MHz
Reverse recovery time
trr - -
IF = 10 mA, IR = 10 mA, measured at IR = 1mA ,
RL = 100 Ω
max. 2 4
Unit pF ns
Test circuit for reverse recovery time
D.U.T. Oscillograph
ΙF
Pulse generator: tp = 100ns, D = 0.05, tr = 0.6ns, Ri = 50Ω
Oscillograph: R = 50Ω, tr = 0.35ns, C = 0.05pF
EHN00017
4 2009-09-28
Reverse current IR = ƒ (TA) VR = Parameter
10 5 nA
10 4
10 3
70 V 25 V 10 2
BAS16...
Forward Voltage VF = ƒ (TA) IF = Parameter
1.0 BAS 16
VF V
Ι F = 100 mA
EHB00025
10 mA 0.5 1 mA
0.1 mA
IR IF
10 1 0
25 50 75 100 °C 150
TA
Forward current IF = ƒ (VF) TA = 25°C
0 0 50 100 C 150 TA
Forward current IF = ƒ.