BAS125W

BAS125W Silicon Schottky Diodes
For low-loss, fast-recovery, meter protection, bias isolation and clamping applications
Integrated diffused guard ring
Low forward voltage 3 2 1 BAS125W BAS125-04W 3 1 3 EHA07002 VSO05561 BAS125-05W 3 BAS125-06W 3 1 2 EHA07005 1 2 EHA07004 1 2 EHA07006 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BAS125W BAS125-04W BAS125-05W BAS125-06W 13s 14s 15s 16s 1=A 1 = A1 1 = A1 1 = C1 2 n.c. 2 = C2 2 = A2 2 = C2 3=C 3 = C1/A2 3 = C1/2 3 = A1/2 SOT323 SOT323 SOT323 SOT323 Maximum Ratings Parameter Diode reverse voltage Forward current Surge forward current (t
100s) Total power dissipation BAS125W, TS = 93 °C BAS 125-04W...06W Junction temperature Storage temperature , TS = 84 °C Symbol VR IF IFSM Ptot Ptot Tj Top Tstg Value 25 100 500 250 250 150 -55 ... 150 -55 ... 150 mW °C Unit V mA Operating temperature range Thermal Resistance Junction - soldering point1) BAS125W BAS125-04W...06W 1For calculation of R thJA please refer to Application Note Thermal Resistance RthJS K/W
230
265 1 Nov-15-2001 BAS125W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Reverse current VR = 20 V VR = 25 V Forward voltage IF = 1 mA IF = 10 mA IF = 35 mA AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Differential forward resistance IF = 5 mA, f = 10 kHz Rf CT Unit max. nA typ. IR VF 385 ...