BAS125-07W
Silicon Schottky Diode
For low-loss, fast-recovery, meter protection,
3 4
bias isolation and clamping app...
BAS125-07W
Silicon
Schottky Diode
For low-loss, fast-recovery, meter protection,
3 4
bias isolation and clamping applications
Integrated diffused guard ring Low forward voltage
2 1
4 3 1 2
EHA07008
VPS05605
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BAS125-07W
Maximum Ratings Parameter Diode reverse voltage Forward current
Marking 17s 1 = C1
Pin Configuration 2 = C2 3 = A2 4 = A1
Package SOT343
Symbol VR IF IFSM Ptot Tj Tstg
Value 25 100 500 250 150 -55 ... 150
Unit V mA mW °C
Surge forward current (t 100s) Total power dissipation , TS = 96 °C Junction temperature Storage temperature
Maximum Ratings Junction - soldering point1) RthJS
215
K/W
1For calculation of R thJA please refer to Application Note Thermal Resistance
1
Aug-16-2001
BAS125-07W
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Reverse current VR = 20 V VR = 25 V Forward voltage IF = 1 mA IF = 10 mA IF = 35 mA
AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Differential forward resistance IF = 5 mA, f = 10 kHz
Rf
Unit max. nA
typ.
IR VF 385 530 800 400 650 950 100 150
mV
CT
-
16
1.1 -
pF
2
Aug-16-2001
BAS125-07W
Forward current IF = f (VF )
TA = Parameter
10 2
BAS 125... EHD07115
Total power dissipation Ptot = f(TS)
100
mA
ΙF
mA
80
10
1
10 0
TA = -40C 25 C 85 C 150 C
70
IF
60 50 40 30 20 10
10 -1
10 -2 0.0
0.5
V VF
1.0
0 0
15
30
45
...
