BAS125-05

Silicon Schottky Diodes q q q BAS 125 … For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring Low forward voltage ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAS 125 BAS 125-04 Marking 13 14 Ordering Code Pin Configuration (tape and reel) Q62702-D1316 Q62702-D1321 Package1) SOT-23 BAS 125-05 15 Q62702-D1322 BAS 125-06 16 Q62702-D1323 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 02.96 BAS 125 … q q q For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring Low forward voltage ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAS 125-07 Marking 17 Ordering Code Pin Configuration (tape and reel) Q62702-D1327 Package1) SOT-143 Maximum Ratings per Diode Parameter Reverse voltage Forward current Surge forward current, t ≤ 10 ms Total power dissipation, TS ≤ 25 ˚C 3) Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol VR IF IFSM Ptot Tj Tstg Values 25 100 500 250 150 – 55 … + 150 Unit V mA mW ˚C 725 565 K/W 1) 2) 3) For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm. 450 mW per package. Semiconductor Group 2 BAS 125 … Electrical Characteristics per Diode at TA = 25 ˚C, unless otherwise...