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BAS116LT1

ON Semiconductor

Switching Diode

www.DataSheet4U.com BAS116LT1 Preferred Device Switching Diode • • • • This switching diode has the following features...


ON Semiconductor

BAS116LT1

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Description
www.DataSheet4U.com BAS116LT1 Preferred Device Switching Diode This switching diode has the following features: Low Leakage Current Applications Medium Speed Switching Times Available in 8 mm Tape and Reel Use BAS116LT1 to order the 7 inch/3,000 unit reel Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 75 200 500 Unit Vdc mAdc mAdc 3 CATHODE 1 ANODE MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 −55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C JV = Specific Device Code M = Date Code SOT−23 (TO−236) CASE 318 STYLE 8 JV M Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. ORDERING INFORMATION Device BAS116LT1 BAS116LT1G Package SOT−23 SOT−23 (Pb−Fr...




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