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BAR88-02V

Infineon Technologies AG

Silicon PIN Diode

BAR88... Silicon PIN Diode • Optimized for low current antenna switches in hand held applications • Very low forward res...


Infineon Technologies AG

BAR88-02V

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BAR88... Silicon PIN Diode Optimized for low current antenna switches in hand held applications Very low forward resistance (typ. 1.5 Ω @ IF = 1 mA) Low capacitance at zero volt reverse bias at frequencies above 1 GHz (typ. 0.28 pF) Very low signal distortion BAR88-02L BAR88-02V BAR88-07L4 4 3 BAR88-099L4 4 3 1 2 D 1 D 2 D 1 D 2 1 2 1 2 Type BAR88-02L BAR88-02V BAR88-07L4* BAR88-099L4* Package TSLP-2-1 SC79 TSLP-4-4 TSLP-4-4 Configuration single, leadless single parallel pair, leadless anti-parallel pair, leadless LS(nH) 0.4 0.6 0.4 0.4 Marking UU U UT US * Preliminary Data Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Forward current Total power dissipation BAR88-02L, -07L4, -099L4 Ts ≤ 133°C BAR88-02V, Ts ≤ 123°C Junction temperature Operating temperature range Storage temperature Tj Top Tstg Symbol VR IF Ptot 250 250 150 -55 ... 125 -55 ... 150 °C Value 80 100 Unit V mA mW 1 Dec-08-2003 BAR88... Thermal Resistance Parameter Junction - soldering point 1) BAR88-02L, 07L4, -099L4 BAR88-02V Symbol RthJS ≤ 65 ≤ 105 Value Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Breakdown voltage I (BR) = 5 µA Reverse current VR = 60 V Forward voltage I F = 1 mA I F = 100 mA 1For Unit max. 50 V nA V typ. - V(BR) IR VF 80 - - 0.75 0.95 0.9 1.2 calculation of RthJA please refer to Application Note Thermal Resistance 2 Dec-08-2003 ...




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