Silicon RF Switching Diode (Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss)
BAR 80
l l l
Silicon RF Switching Diode
Design for use in shunt configuration Hight shunt signal isolation Low shunt i...
Description
BAR 80
l l l
Silicon RF Switching Diode
Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss
Type BAR 80
Marking AAs
Ordering code (tape and reel) Q62702-A1084
Pin configuration 1 2 3 C A C
Package 4 A MW-4
1)
Maximum ratings Parameter Reverse voltage Forward current Operating temperature range Storage temperature range Symbol BAR 80 35 100 -55...+125 -55...+150 Unit V mA °C °C
VR IF Top Tstg
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm
Semiconductor Group
1
Edition A02, 27.02.95
BAR 80
Electrical characteristics
at TA = 25 °C, unless otherwise specified.
Parameter Reverse current VR = 20 V Forward voltage IF = 100 mA Diode capacitance VR = 1 V,f = 1 MHz VR = 3 V,f = 1 MHz Forward resistance
Symbol min.
Value typ. 0.92 1 0.92 0.5 0.14 max.
Unit nA
IR
20
VF
1
V pF 0.6 1.6 1.3 Ω 0.7 nH -
CT
f = 100MHz
rf Ls
IF = 5 mA
Series inductance to ground Application information Shunt signal isolation
23 0.15 -
dB dB -
IF = 10 mA, f = 2 GHz, RG = RL = 50 Ω
Shunt insertion loss VR = 5 V, f = 2 GHz, RG = RL = 50 Ω
IL
Configuration of the shunt-diode
-A perfect ground is essential for optimum isolation -The anode pins should be used as passage for RF
Semiconductor Group
2
Edition A02, 27.02.95
BAR 80
Forward current IF = f (TS,TA) Forward resistance rf = (IF) f = 100 MHz
mA
I
F
TS
TA
TS
TA
Dioden capacitance CT = f (VR) f = 1 MHz
Semiconductor Group
3
Edition A02, 27.02.95
BAR 80
Permissible pulse ...
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