BAR66

BAR66... Silicon PIN Diode Array Surge protection device Designed for surge overvoltage clamping in antiparallel connection BAR66 3 D 1 D 2 1 2 Type BAR66 Package SOT23 Configuration series LS(nH) Marking 1.8 PMs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Forward current Total power dissipation Ts
25 °C Junction temperature Operating temperature range Storage temperature Thermal Resistance Parameter Junction - soldering point1) , BAR66 1For Symbol VR IF Ptot Tj Top Tstg Symbol RthJS Value 150 200 250 150 -55 ... 125 -55 ... 150 Unit V mA mW °C Value Unit K/W
290 calculation of RthJA please refer to Application Note Thermal Resistance 1 Feb-04-2003 BAR66... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. DC Characteristics Breakdown voltage I(BR) = 5 µA Reverse current VR = 100 V Forward voltage IF = 50 mA AC Characteristics Diode capacitance VR = 35 V, f = 1 MHz VR = 0 V, f = 100 MHz Zero bias conductance VR = 0 V, f = 100 MHz Forward resistance IF = 5 mA, f = 100 MHz Charge carrier life time RL = 100
IF = 10 mA, IR = 6 mA, measured at IR = 3 mA, rf 1.5 0.7 1.8 gP CT 0.4 0.35 220 0.6 0.9 µs pF Unit max. 20 1.2 V nA V typ. 0.95 V(BR) IR VF 150 -
µs  rr 2 Feb-04-2003 BAR66... Diode capacitance CT = (VR ) f = Parameter 0.8 pF Forward resistance rf =  (IF ) f = 100MHz 10 3 Ohm 0.6 10 2 CT rf 1MHz 0.5 0.4 10 1 0.3 100MHz 0.2 10 0 ...