Document
BAR 64...
Silicon PIN Diode
l High voltage current controlled l RF resistor for RF attenuator and swirches l Freqency range above 1 MHz l Low resistance and short carrier lifetime l For frequencies up to 3 GHz
Type BAR 64 BAR 64-04 BAR 64-05 BAR 64-06 Marking POs PPs PRs PSs Ordering code (tape and reel) Q62702-A1041 Q62702-A1010 Q62702-A1042 Q62702-A1043 Pin configuration Package 1 2 3 A C SOT-23 A C C/A A A C/C C C A/A
1)
Maximum ratings per diode Parameter Reverse voltage Forward current Total Power dissipation TS ≤ 90°C BAR64-04,-05,-06 TS ≤ 65°C Junction temperature Operating temperature range Storage temperature range Thermal resistance Junction-ambient BAR64 BAR64-04,-05,-06
1)
Symbol
BAR 64 200 100 250 250 150 -55 +150°C -55...+150°C
Unit V mA mW °C °C °C
VR IF Ptot Tj Top Tstg
Rth JA
≤ 320 ≤ 500
K/W
Junction-soldering point BAR64 BAR64-04,-05,-06
Rth JS
≤ 240 ≤ 340
_________________________
1)Package mounted on alumina 15mm x 16.7mm x 0.7mm
Semiconductor Group
1
Edition A01, 23.02.95
BAR 64...
Electrical characteristics
at TA = 25 °C, unless otherwise specified.
Parameter
Symbol min.
Value typ. max.
Unit
DC characteristics per diode Breakdown voltage IR = 5 µA Forward voltage IF = 50 mA Diode capacitance VR = 20 V, f = 1 MHz Forward resistance IF = 1 mA, f = 100 MHz IF = 10 mA, f = 100 MHz IF = 100 mA, f = 100 MHz Charge carrier lifetime IF = 10 mA, IR = 6 mA, IR = 3 mA Series inductance
V(BR)
200 0.23 12.5 2.1 0.85 1.55 1.4 -
V V 1.1 pF 0.35 Ω -20 3.8 1.35 µs nH
VF CT rf
τL
Ls
Forward current rF= f (TS;TA*) BAR64 * mounted on alumina
Forward current rF= f (TS;TA*) per each diode BAR64-05,-05,-06
mA
mA
TS IF
I
TS
TA
F
TA
TS
TA
TS
TA
Semiconductor Group
2
Edition A01, 23.02.95
BAR 64...
Permissible pulse load RthJS = f (tp)
BAR64
Permissible pulse load Ifmax/If DC=f(tp)
BAR64
K/W
Permissible pulse load RthJS= f (tp)
BAR64-04,-05,-06
K/W
Permissible pulse load IFmax/IFDC = f (tp)
BAR64-04,-05,-06
Semiconductor Group
3
Edition A01, 23.02.95
BAR 64...
Forward current IF=f(VF)
Forward resistance rf= f (IF) f = 100 MHz
Diode capacitance CT= f (VR) f = 1 MHz.
Semiconductor Group
4
Edition A01, 23.02.95
.