BAR64-02W

BAR 64-02W Silicon PIN Diode High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz Low resistance and short carrier lifetime Very low inductance For frequencies up to 3 GHz Extremely small plastic SMD package 2 1 VES05991 Type BAR 64-02W Marking Ordering Code M Q62702-A1215 Pin Configuration 1=C 2=A Package SCD-80 Maximum Ratings Parameter Diode reverse voltage Forward current Total power dissipation, T S ≤ 125°C Junction temperature Operating temperature range Storage temperature Thermal Resistance Junction - ambient 1) Symbol Value 200 100 250 150 - 55 ...+150 - 55 ...+150 Unit V mA mW °C °C VR IF Ptot Tj Top Tstg RthJA RthJS ≤ 220 ≤ 140 K/W Junction - soldering point 1) Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group Semiconductor Group 11 Sep-07-1998 1998-11-01 BAR 64-02W Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Values min. Characteristics Breakdown voltage typ. max. 1.1 Unit V(BR) VF 200 - V mV I (BR) = 5 µA Forward voltage I F = 50 mA AC characteristics Diode capacitance CT CC rf - 0.23 0.09 0.35 - pF VR = 20 V, f = 1 MHz Case capacitance f = 1 MHz Forward resistance Ω τrr 12.5 2.1 0.85 1.55 0.6 20 3.8 1.35 µs nH I F = 1 mA, f = 100 MHz I F = 10 mA, f = 100 MHz I F = 100 mA, f = 100 MHz Charge carrier life time I F = 10 mA, I R = 6 mA, I R = 3 mA Series inductance Ls Semiconductor Group Semiconductor Group ...