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BAR63-04 Dataheets PDF



Part Number BAR63-04
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
Datasheet BAR63-04 DatasheetBAR63-04 Datasheet (PDF)

BAR 63... Silicon PIN Diode l PIN diode for high speed switching of RF signals l Low forward resistance l Very low capacitance l For frequencies up to 3 GHz Type BAR 63 BAR 63-04 BAR 63-05 BAR 63-06 Marking G3 G4 G5 G6 Ordering code (tape and reel) Q62702-A1036 Q62702-A1037 Q62702-A1038 Q62702-A1039 Pin configuration Package 1 2 3 A C SOT-23 A C C/A A A C/C C C A/A 1) Maximum ratings Parameter Reverse voltage Forward current Total Power dissipation TS ≤ 80°C BAR 63-04,-05,-06 TS ≤ 55°C Operat.

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BAR 63... Silicon PIN Diode l PIN diode for high speed switching of RF signals l Low forward resistance l Very low capacitance l For frequencies up to 3 GHz Type BAR 63 BAR 63-04 BAR 63-05 BAR 63-06 Marking G3 G4 G5 G6 Ordering code (tape and reel) Q62702-A1036 Q62702-A1037 Q62702-A1038 Q62702-A1039 Pin configuration Package 1 2 3 A C SOT-23 A C C/A A A C/C C C A/A 1) Maximum ratings Parameter Reverse voltage Forward current Total Power dissipation TS ≤ 80°C BAR 63-04,-05,-06 TS ≤ 55°C Operating temperature range Storage temperature range Thermal resistance Junction-ambient BAR63 BAR 63-04,-05,-06 1) Symbol BAR 63 50 100 250 250 -55 +150°C -55...+150°C Unit V mA mW °C °C VR IF Ptot Top Tstg Rth JA ≤ 450 ≤ 540 K/W Junction-soldering point BAR64 BAR63-04,-05,-06 Rth JS ≤ 280 ≤ 380 _________________________ 1)Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group 1 Edition A01, 23.02.95 BAR 63... Electrical characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol min. Value typ. max. Unit DC characteristics Breakdown voltage IR = 5 µA Reverse leakage VR = 20 V Forward voltage IF = 100 mA Diode capacitance VR = 0 V, f = 100 MHz Diode capacitance VR = 5 V, f = 1 MHz Forward resistance IF = 5 mA, f = 100 MHz IF = 10 mA, f = 100 MHz Charge carrier lifetime IF = 10 mA, IR = 6 mA, IR = 3 mA Series inductance Forward current IF = f (TA*TS) BAR63 V(BR) 50 0.95 0.3 0.21 1.2 1 75 1.4 - V nA 50 V 1.2 pF pF 0.3 Ω 2 ns nH IR VF CT CT rf τs Ls Forward current IF = f (TA*TS) per each Diode BAR63-04,-05,-06 mA mA TS IF TA TS IF TA TS TA TS TA Semiconductor Group 2 Edition A01, 23.02.95 BAR 63... Permissible pulse load RthJS = f (tp) BAR63 K/W Permissible pulse load IFmax / IFDC = f (tp) BAR63 IFmax _____ I FDC R thJS tp tp Permissible pulse load RthJS = f (tp) BAR63-04,-05,-06 K/W Permissible pulse load IFmax / IFDC = f (tp) BAR63-04,-05,-06 IF max ______ I DC F R thJS tp t p Semiconductor Group 3 Edition A01, 23.02.95 BAR 63... Forward current IF= f(VF) 103 [mA] 2 10 IF 1 10 85°C 25°C 0 10 -40°C 10-1 10-2 10-3 0.3 0.5 VF 0.8 1 [V] 1.2 Forward resistance rf= f (IF) f = 100 MHz Diode capacitance CT= f (VR) f = 1 MHz. Semiconductor Group 4 Edition A01, 23.02.95 .


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