BAR43S

® BAR 42 BAR 43, A, C, S SMALL SIGNAL SCHOTTKY DIODES K N.C. A A K1 K2 BAR42/BAR43 BAR43A K A1 A1 K2 K1 DESCRIPTION General purpose metal to silicon diodes featuring very low turn-on voltage and fast switching. A2 A2 BAR43C SOT-23 (Plastic) BAR43S ABSOLUTE RATINGS (limiting values) Symbol VRRM IF IFSM Ptot Tstg Tj TL Parameter Repetitive peak reverse voltage Continuous forward current Surge non repetitive forward current Power dissipation (note 1) Maximum storage temperature range Maximum operating junction temperature * Maximum temperature for soldering during 10s tp=10ms sinusoidal Tamb = 25°C Value 30 100 750 250 - 65 to +150 150 260 Unit V mA mA mW °C °C °C Note 1: for double diodes, Ptot is the total power dissipation of both diodes. * : 1 dPtot thermal runaway condition for a diode on its own heatsink < dTj Rth(j−a) THERMAL RESISTANCE Symbol Rth(j-a) Test conditions Junction-ambient * Value 500 Unit °C/W * Mounted on epoxy board with recommended pad layout. June 1999 - Ed: 2A 1/4 BAR 42/BAR 43, A, C, S ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol VBR VF * Tj = 25°C Tj = 25°C Test Conditions IR = 100µA BAR 42 BAR 43 All IR ** Pulse test: Min. 30 IF = 10 mA IF = 50 mA IF = 2 mA IF = 15 mA IF = 100 mA 0.26 Typ. 0.35 0.5 Max. 0.4 0.65 0.33 0.45 1 500 100 Unit V V Tj = 25°C Tj = 100°C * tp = 380µs, δ < 2% ** tp = 5 ms, δ <2% VR = 25V nA µA DYNAMIC CHARACTERISTICS Symbol C trr η* Test Conditions Tj = 25°C Tj = 25°C Irr = 1mA Tj = 25°C...