Silicon PIN Diode
Silicon PIN Diode
q q q q
BAR 17
RF switch RF attenuator for frequencies above 1 MHz Low distortion factor Long-term s...
Description
Silicon PIN Diode
q q q q
BAR 17
RF switch RF attenuator for frequencies above 1 MHz Low distortion factor Long-term stability of electrical characteristics
Type BAR 17
Marking L6
Ordering Code (tape and reel) Q62702-A858
Pin Configuration
Package1) SOT-23
Maximum Ratings Parameter Reverse voltage Forward current Total power dissipation, TS ≤ 95 ˚C2) Junction temperature Storage temperature range Operating temperature range Thermal Resistance Junction - ambient 2) Junction - soldering point Rth JA Rth JS
≤ ≤
Symbol VR IF Ptot Tj Tstg Top
Values 100 140 250 150 – 55 … + 150 – 55 … + 150
Unit V mA mW ˚C
295 215
K/W
1) 2)
For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.
Semiconductor Group
1
07.94
BAR 17
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Reverse current VR = 50 V VR = 100 V Forward voltage IF = 100 mA Diode capacitance VR = 50 V, f = 1 MHz VR = 0, f = 100 MHz Charge carrier life time IF = 10 mA, IR = 6 mA Forward resistance f = 100 MHz, IF = 0.01 mA IF = 0.1 mA IF = 1.0 mA IF = 10 mA Symbol min. IR – – VF CT – –
τL
Values typ. – – 0.91 max. 50 1 1
Unit
nA µA V pF
–
0.32 0.37 4
0.55 – –
µs
–
rf – – – – 1150 160 23 3.5 – – – –
Ω
Semiconductor Group
2
BAR 17
Forward current IF = f (VF)
Forward current IF = f (TS; TA*) *Package mounted on alumina
If
Forward resistance rf = f (IF) f = 100 MHz
Diode capacitance CT = f (VR)
Semiconductor Group
...
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