BAL99LT1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BAL99LT1/D Switching Diode ANODE 3 CATHODE 2 BAL99LT1 MAXIMUM RATINGS 3 Rating Continuous Reverse Voltage Peak Forward Current Symbol VR IF Value 70 100 Unit Vdc mAdc 1 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C CASE 318 – 08, STYLE 18 SOT– 23 (TO – 236AB) DEVICE MARKING BAL99LT1 = JF ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 70 Vdc) (VR = 25 Vdc, TJ = 150°C) (VR = 70 Vdc, TJ = 150°C) Reverse Breakdown Voltage (IR = 100 µAdc) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) Recovery Current (IF = 10 mAdc, VR = 5.0 Vdc, RL = 500 Ω) Diode Capacitance (VR = 0, f = 1.0 MHz) Reverse Recovery Time (IF = IR = 10 mAdc, RL = 100 Ω, measured at IR = 1.0 mAdc) Forward Recovery Voltage (IF = 10 mAdc, tr = 20 ns) 1. FR– 5 = 1.0 0.75 2. Alumina = 0.4 0.3 IR — — — V(BR) VF — — — — QS CD trr VFR — — — — 715 855 1000 1250 45 1.5 6.0 1.75 pC pF ns Vdc 70 2.5 30 50 — Vdc mV µAdc   0.062 in.   0.024 in. 99.5% alumina. T...