BAL99

BAL99, BAV99 Small Signal Diodes SOT-23 .122 (3.1) .118 (3.0) .016 (0.4) 3 FEATURES ♦ Silicon Epitaxial Planar Diode Top View .056 (1.43) .052 (1.33) ♦ Fast switching diodes, especially suited for automatic insertion. ♦ This diode is also available in other configurations including a dual common cathode with type designation BAV70 and a dual common anode with type designation BAW56. .045 (1.15) .037 (0.95) 1 2 max. .004 (0.1) .007 (0.175) .005 (0.125) .037(0.95) .037(0.95) .016 (0.4) .016 (0.4) .102 (2.6) .094 (2.4) MECHANICAL DATA Case: SOT-23 Plastic Package Weight: approx. 0.008 g Dimensions in inches and (millimeters) 3 3 Top View 1 2 1 2 Top View BAL99 Marking: JF BAV99 Marking: JE MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings for a single diode at 25 °C ambient temperature unless otherwise specified. Symbol Reverse Voltage, Peak Reverse Voltage Forward Current (continuous) Non-Repetitive Peak Forward Current at t = 1 µs at t = 1 ms at t = 1 s Power Dissipation at Tamb = 25 °C Junction Temperature Storage Temperature Range 1) Value 70 250 2 1 0.5 3501) 150 –65 to +150 Unit V mA A A A mW °C °C V R, VRM IF IFSM IFSM IFSM Ptot Tj TS Device on fiberglass substrate, see layout. 4/98 BAL99, BAV99 ELECTRICAL CHARACTERISTICS Ratings for one diode at 25 °C ambient temperature unless otherwise specified Symbol Forward Voltage at IF = 1 mA at IF = 10 mA at IF = 50 mA at IF = 150 mA Leakage Current at VR = 70 V at VR = 70 V, Tj = 150 °C at VR = 25 V...