Silicon Planar Diodes
BA982.BA983
Vishay Telefunken
Silicon Planar Diodes
Features
D D D D
Low differential forward resistance Low diode capa...
Description
BA982.BA983
Vishay Telefunken
Silicon Planar Diodes
Features
D D D D
Low differential forward resistance Low diode capacitance High reverse impedance Quadro Melf package
Applications
Band switching in VHF–tuners
96 12009
Absolute Maximum Ratings
Tj = 25_C Parameter Reverse voltage Forward current Junction temperature Storage temperature range Test Conditions Type Symbol VR IF Tj Tstg Value 35 100 150 –55...+150 Unit V mA °C °C
Maximum Thermal Resistance
Tj = 25_C Parameter Junction ambient Test Conditions on PC board 50mmx50mmx1.6mm Symbol RthJA Value 500 Unit K/W
Electrical Characteristics
Tj = 25_C Parameter Forward voltage Reverse current Diode capacitance Test Conditions IF=100mA VR=20V f=100MHz, VR=1V f=100MHz, VR=3V f=200MHz, IF=3mA f=200MHz, IF=10mA Type Symbol VF IR CD CD CD rf rf rf rf Min Typ Max 1 50 1.5 1.25 1.2 0.7 1.2 0.5 0.9 Unit V nA pF pF pF
Differential forward resistance
BA982 BA983 BA982 BA983 BA982 BA983
W W W W
Document Number 85534 Rev. 2, 01-Apr-99
www.vishay.de FaxBack +1-408-970-5600 1 (3)
BA982.BA983
Vishay Telefunken
rf – Differential Forward Resistance (W ) 100 CD – Diode Capacitance ( pF ) f = 200 MHz Tj = 25°C 10 3.0 2.5 2.0 1.5 BA 982 1.0 BA 983 0.5 0 0.1
94 9076
f = 100 MHz Tj = 25°C
BA 983 1
BA 982 0.1 1 10 100
94 9077
0.1
1
10
100
IF – Forward Current ( mA )
VR – Reverse Voltage ( V )
Figure 1. Differential Forward Resistance vs. Forward Current
Figure 2. Diode Capacitance vs. Reverse Voltage
Dimensions in mm
96 12...
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