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BA792

NXP

Band-switching diode

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage L8 M3D178 BA792 Band-switching diode Product specification 1996 Mar ...


NXP

BA792

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage L8 M3D178 BA792 Band-switching diode Product specification 1996 Mar 13 Philips Semiconductors Product specification Band-switching diode FEATURES Ceramic SMD package Low diode capacitance: max. 1.1 pF Low diode forward resistance: max. 0.7 Ω. APPLICATIONS Low loss band-switching in VHF television tuners Surface mount high-speed switching circuits. Marking code: L8. bottom view side view top view handbook, 4 columns BA792 cathode mark k k a a MAM139 DESCRIPTION Planar, high performance band-switching diode in a small ceramic SOD110 SMD package. Fig.1 Simplified outline (SOD110) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF Tstg Tj PARAMETER continuous reverse voltage continuous forward current storage temperature junction temperature − − −65 − MIN. 35 100 +150 150 MAX. V mA °C °C UNIT 1996 Mar 13 2 Philips Semiconductors Product specification Band-switching diode ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF IR Cd rD Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Device mounted on a printed-circuit board measuring 11 × 25 × 1.6 mm. MOUNTING Reflow soldering Follow standard reflow soldering techniques to ensure correct application of solder paste and placement of the SOD110 package (see Fig.2). Wave soldering PARAMETER thermal resistance from junction to a...




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