Silicon PIN Diodes
BA779.BA779S
Vishay Telefunken
Silicon PIN Diodes
Features
D Wide frequency range 10 MHz to 1 GHz
Applications
Current...
Description
BA779.BA779S
Vishay Telefunken
Silicon PIN Diodes
Features
D Wide frequency range 10 MHz to 1 GHz
Applications
Current controlled HF resistance in adjustable attenuators
94 8550
Absolute Maximum Ratings
Tj = 25_C Parameter Reverse voltage Forward current Junction temperature Storage temperature range Test Conditions Type Symbol VR IF Tj Tstg Value 30 50 125 –55...+125 Unit V mA °C °C
Maximum Thermal Resistance
Tj = 25_C Parameter Junction ambient Test Conditions on PC board 50mmx50mmx1.6mm Symbol RthJA Value 500 Unit K/W
Electrical Characteristics
Tj = 25_C Parameter Forward voltage Reverse current Diode capacitance Differential forward resistance Reverse impedance Minority carrier lifetime Test Conditions IF=20mA VR=30 V f=100MHz, VR=0 f=100MHz, IF=1.5mA f=100MHz, VR=0 IF=10mA, IR=10mA Type Symbol VF IR CD rf zr zr Min Typ Max 1 50 0.5 50 Unit V nA pF
W
BA779 BA779S
t
5 9 4
kW kW ms
Document Number 85532 Rev. 3, 01-Apr-99
www.vishay.de FaxBack +1-408-970-5600 1 (4)
BA779.BA779S
Vishay Telefunken Characteristics (Tj = 25_C unless otherwise specified)
100 IF – Forward Current ( mA ) a – Typical Cross Modulation Distortion ( dB ) 20
10 Tamb= 25°C 1 Scattering Limit 0.1
0
P–Circuit with 10 dB Attenuation
V0 = 40 dB mV f1 = 100 MHz unmodulated
–20
–40 –60 –80 0 20 40 60 80 f2, modulated with 200 kHz, m=100% (MHz)
0.01 0
95 9735
0.4
0.8
1.2
1.6
2.0
95 9733
VF – Forward Voltage ( V )
Figure 1. Forward Current vs. Forward Voltage
Figure 3. Typ. Cross Mod...
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