DatasheetsPDF.com

HN1K06FU

Toshiba Semiconductor
Part Number HN1K06FU
Manufacturer Toshiba Semiconductor
Description TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
Published Mar 26, 2005
Detailed Description HN1K06FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K06FU High Speed Switching Applications Analog S...
Datasheet PDF File HN1K06FU PDF File

HN1K06FU
HN1K06FU

Overview
HN1K06FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K06FU High Speed Switching Applications Analog Switch Applications Unit: mm · · · · High input impedance and extremely low drive current.
Vth is low and it is possible to drive directly at low-voltage CMOS.
: Vth = 0.
5 to 1.
5 V Switching speed is fast.
Suitable for high-density mounting because of a compact package Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Characteristics Drain-source voltage Gate-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range Symbol VDS VGSS ID PD (Note) Tch Tstg Rating 20 10 100 200 150 -55 to 150 Unit V V mA mW °C °C JEDEC JEITA TOSHIBA Weight:...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)