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HN1D03FU

Toshiba Semiconductor
Part Number HN1D03FU
Manufacturer Toshiba Semiconductor
Description Diode
Published Mar 26, 2005
Detailed Description TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03FU HN1D03FU Ultra High Speed Switching Application  AEC-Q101 Qualif...
Datasheet PDF File HN1D03FU PDF File

HN1D03FU
HN1D03FU

Overview
TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03FU HN1D03FU Ultra High Speed Switching Application  AEC-Q101 Qualified (Note1)  Built in anode common and cathode common.
Note1: For detail information, please contact our sales Unit: mm Unit 1  Low forward voltage  Fast reverse recovery time  Small total capacitance Unit 2  Low forward voltage  Fast reverse recovery time  Small total capacitance Q1, Q2: VF (3) = 0.
90 V (typ.
) Q1, Q2: trr = 1.
6 ns (typ.
) Q1, Q2: CT = 0.
9 pF (typ.
) Q3, Q4: VF (3) = 0.
92 V (typ.
) Q3, Q4: trr = 1.
6 ns (typ.
) Q3, Q4: CT = 2.
2 pF (typ.
) Unit 1, Unit 2 Common Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) re...


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