ADG636

a 1 pC Charge Injection, 100 pA Leakage CMOS ؎5 V/+5 V/+3 V Dual SPDT Switch ADG636 FUNCTIONAL BLOCK DIAGRAM ADG636 S1A 4 6 FEATURES 1 pC Charge Injection ؎2.7 V to ؎ 5.5 V Dual Supply +2.7 V to +5.5 V Single Supply Automotive Temperature Range: –40؇ C to +125؇C 100 pA (Max @ 25؇ C) Leakage Currents 85 ⍀ Typ On Resistance Rail-to-Rail Operation Fast Switching Times Typical Power Consumption (<0.1 ␮W) TTL/CMOS Compatible Inputs 14-Lead TSSOP Package APPLICATIONS Automatic Test Equipment Data Acquisition Systems Battery-Powered Instruments Communication Systems Sample-and-Hold Systems Remote Powered Equipment Audio and Video Signal Routing Relay Replacement Avionics D1 S1B 5 S2A 11 9 S2B 10 D2 LOGIC 1 14 2 A0 A1 EN GENERAL DESCRIPTION PRODUCT HIGHLIGHTS The ADG636 is a monolithic device, comprising two independently selectable CMOS SPDT (Single Pole, Double Throw) switches. When on, each switch conducts equally well in both directions. The ADG636 operates from a dual ± 2.7 V to ± 5.5 V supply, or from a single supply of +2.7 V to +5.5 V. This switch offers ultralow charge injection of ± 1.5 pC over the entire signal range and leakage current of 10 pA typical at 25°C. It offers on-resistance of 85 Ω typ, which is matched to within 2 Ω between channels. The ADG636 also has low power dissipation yet gives high switching speeds. The ADG636 exhibits break-before-make switching action and is available in a 14-lead TSSOP package. 1. Ultralow Charge Injection (QINJ: ±...