ADG612

1 pC Charge Injection, 100 pA Leakage, CMOS, ±5 V/+5 V/+3 V, Quad SPST Switches ADG611/ADG612/ADG613 02753-001 FEATURES 1 pC charge injection ±2.7 V to ±5.5 V dual-supply operation +2.7 V to +5.5 V single-supply operation Automotive temperature range: −40°C to +125°C 100 pA maximum at 25°C leakage currents 85 Ω on resistance Rail-to-rail switching operation Fast switching times 16-lead TSSOP and SOIC packages Typical power consumption: <0.1 μW TTL-/CMOS-compatible inputs APPLICATIONS Automatic test equipment Data acquisition systems Battery-powered systems Communications systems Sample-and-hold systems Audio signal routing Relay replacement Avionics GENERAL DESCRIPTION The ADG611/ADG612/ADG613 are monolithic CMOS devices containing four independently selectable switches. These switches offer ultralow charge injection of 1 pC over the full input signal range and typical leakage currents of 10 pA at 25°C. The devices are fully specified for ±5 V, +5 V, and +3 V supplies. Each contains four independent single-pole, single-throw (SPST) switches. The ADG611 and ADG612 differ only in that the digital control logic is inverted. The ADG611 switches are turned on with a logic low on the appropriate control input, whereas a logic high is required to turn on the switches of the ADG612. The ADG613 contains two switches with digital control logic similar to that of the ADG611 and two switches in which the logic is inverted. FUNCTIONAL BLOCK DIAGRAM ADG611 S1 ADG612 S1 ADG613 S1 IN1...